Self-assembly method for developing film of zinc oxide through induction of seed crystal and liquid phase epitaxy in low temperature

A zinc oxide thin film, low-temperature liquid phase technology, applied in the direction of liquid phase epitaxy layer growth, crystal growth, chemical instruments and methods, etc., can solve the problems of difficult preparation of high-quality ZnO thin film, high operating cost of equipment, and easy generation of thermal defects, etc. problem, to achieve the effect of low cost, high reliability, and easy industrialization

Inactive Publication Date: 2005-11-16
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

All of the above methods require expensive equipment and high operating costs, and must complete material growth at a high temperature above 500 °C
Growth of ZnO crystal film at high temperature is prone to thermal defects. In addition, ZnO crystal film and Al 2 o 3 The difference in lattice constant and thermal expansion coefficient of the substrate is also very prone to thermal defects, so it is difficult to prepare high-quality ZnO thin films
Although scientists at home and abroad have made great progress in this area, there is still a long way to go before ZnO thin film materials that meet the quality requirements of devices.

Method used

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Embodiment Construction

[0010] At room temperature, fully grind zinc acetate and sodium bicarbonate of equal mass until the chemical reaction between zinc acetate and sodium bicarbonate can occur completely. Zinc acetate and sodium bicarbonate are pure reagents for chemical analysis. After the zinc acetate and sodium bicarbonate are fully ground, the zinc acetate and sodium bicarbonate are completely mixed, which is conducive to the complete reaction of the two. After reacting at 160°C for 2 hours, the product was washed with deionized water and dried at 100°C to obtain white amorphous ZnO powder.

[0011] A 1% ethanol solution of amorphous ZnO was evenly spin-coated on the cleaned substrate by spin-coating technology. The ethanol used is a pure reagent for chemical analysis, and the substrate used is crystalline Al 2 o 3 , the lattice orientation of the substrate is (0001). The reaction was carried out at 200° C. for 3 hours. After the reaction of amorphous ZnO, on the substrate Al 2 o 3 (000...

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Abstract

A process for growing zinc oxide film by seed crystal inducing and low-temp liquid-phase epitaxial self-assembly includes mixing zinc acetate with sodium bicarbonate, grinding, reacting at 160 deg.C for 2-4 hrs, washing with deionized water, baking at 100 deg.C to obtain substrate, spinning-coating the alcohol solution of non-crystal ZnO on the substrate, reaction at 180-200 deg.C for 2-4 hrs to generate crystal seeds with same orientation, immersing it in organics solution of zinc acetate, and growing at 80-100 deg.C for 15-20 hrs.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and relates to the preparation of oxide semiconductor thin films, in particular to a method for seed crystal induction and low-temperature liquid phase epitaxy self-assembly growth of zinc oxide thin films. Background technique [0002] ZnO is a direct wide bandgap II-VI semiconductor material with an energy band width of 3.37eV and a room temperature exciton binding energy as high as 60meV. It can theoretically be used to obtain high-efficiency ultraviolet (UV) luminescence. ZnO and GaN have similar lattice structures and band gaps, but ZnO raw materials are cheap and easy to obtain, and have a higher melting point than GaN, with a melting point of 1975°C. The exciton binding energy of ZnO at room temperature is 60meV. Since the exciton binding energy at room temperature is much higher than the thermal ionization energy of 25meV at room temperature, and is also much higher than t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B19/00
Inventor 王志军吕有明申德振王之建李守春元金山张吉英范希武
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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