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Method for producing thermostable type tin indium oxide in low resistance ratio

A technology of indium tin oxide film and low resistance, applied in the manufacture of circuits, electrical components, semiconductors/solid devices, etc. Changes and other issues

Inactive Publication Date: 2006-02-01
WINTEK CORP
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Problems solved by technology

[0004] However, when the touch panel undergoes various treatments during the manufacturing process, such as: annealing, curing, and reliability testing, the oxide dielectric layer will easily be damaged due to long-term heating. Oxygen contained in the ITO film enters into the ITO film due to diffusion and causes changes in the oxygen content of the ITO film, which will reduce the thermal stability of the ITO film and increase the resistance ratio, indirectly resulting in the quality of the ITO film. decline

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  • Method for producing thermostable type tin indium oxide in low resistance ratio
  • Method for producing thermostable type tin indium oxide in low resistance ratio
  • Method for producing thermostable type tin indium oxide in low resistance ratio

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Embodiment Construction

[0020] Hereinafter, preferred embodiments of the present invention are listed and described in detail with accompanying drawings.

[0021] see figure 1 , 2 As shown, the thermally stable and low-resistance ratio indium tin oxide film manufacturing method of the present invention comprises the following steps:

[0022] a. Making an oxide dielectric layer:

[0023] First place a substrate 10 in a vacuum reaction chamber (not shown) of a sputtering system. The substrate 10 used in this embodiment consists of a transparent body 11 and a hard film 12 arranged on one side of the body 11. Composition (refer to figure 2 a), the aforementioned body 11 is made of plastic material, such as polyethylene terephthalate (PET), and the other side of the body 11 constitutes the surface 10a of the substrate 10; in addition, The substrate can also be composed of a hard film on both sides of the transparent body, and the surface of one of the hard films constitutes the surface of the substra...

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Abstract

First, dielectric layer of oxide is sputtered on surface of base plate. Then, ion beam process of containing oxygen is carried out for the surface of dielectric layer of oxide in order to obtain compact dielectric layer of oxide. Thus, phenomena of variable oxygen content appeared on film of tin indium oxide piled on dielectric layer of oxide can be avoided. Further, the film of tin indium oxide possesses better thermal stability and lower resistance ratio.

Description

technical field [0001] The present invention is related to indium tin oxide film, in detail, refers to a thermally stable and low-resistance ratio indium tin oxide film manufacturing method. Background technique [0002] Press, Indium Tin Oxide film (Indium Tin Oxide film) is the key material in the touch panel, and its quality deeply affects the performance of the panel. [0003] In order to improve the light transmittance of the indium tin oxide film, the existing technology is to sequentially deposit a titanium dioxide film (TiO2) on a plastic substrate by a sputtering process. 2 film) and silicon dioxide film (SiO 2 film), and then in the silicon dioxide (SiO 2 ) film on which the indium tin oxide film is deposited, the aforementioned titanium dioxide film and silicon dioxide film are oxide dielectric layers, also known as anti-reflection film layers; 2 film) with high refractive index and silicon dioxide film (SiO 2 film) has the characteristics of low refractive in...

Claims

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Application Information

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IPC IPC(8): H01L21/00C23C14/06C23C14/34
Inventor 陈健忠
Owner WINTEK CORP
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