Method and device for producing thermoelectric semiconductor device and its products obtained thereof

Abstract

This invention discloses a method for manufacturing a thermal electric semiconductor device, the equipment and its products charactering in applying an accurate casting technology to directly cast the melt type P and type N thermal electric semiconductor materials to preset special models separately by quantitatively controlling the exit unit, which casts the materials onto the models separately by a conduit charactering that the P and N thermal electric elements are set at either side of a baffle, the bending part of the metal connection sheets is inserted into the elements and the plane part are fixed on the upper and the lower base plates.

Description

Technical field: [0001] The present invention relates to a method and equipment for manufacturing thermoelectric semiconductor devices and the products obtained therefrom. Background technique: [0002] Thermoelectric semiconductor devices are devices that use the Peltier effect generated when current passes through the P and N junctions of semiconductor materials to produce cooling or heating effects (according to the direction of the current). The structure and working principle schematic diagram of the typical thermoelectric semiconductor device of industrial production at present is as the accompanying drawing part of the description of the present invention figure 1 As shown, its basic unit is to connect a P-type thermoelectric semiconductor element (3) and an N-type thermoelectric semiconductor element (4) with metal connecting pieces (2), (5) to form a pair of thermocouples, and connect the DC power supply After (DC), there will be temperature difference and heat tra...

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Problems solved by technology

[0012] Due to the fact that the powder sintering manufacturing process cannot avoid the pollution problem in the production process, and there are a large number of voids and grain boundaries in the crystal ingot, the resistivity of the material increases, the Joule heat increases, and the carrier mobility decreases, etc., making semiconductor materials The thermoelectric performance decreases, and it is difficult to obtain satisfactory material properties

[0013] The thermoelectric semiconductor material ingots produced by the above two manufacturing processes have a common problem when processing thermocouple elements of specified size. The cutting loss during the processing of thermocouple elements is very large, especially when producing small-sized thermocouple elements. When the blade loss of the cutting tool makes the material loss increase sharply with the reduction of the specification, for example, when cutting a cube with a side length of 1 mm, the material loss reaches 60%, while when cutting a cube with a side length of 0.5 mm, the material loss will decrease up to 80%, which is one of the important reasons for increasing production costs

[0014] In addition, in the entire production process of the finished thermopile, especially in the cutting, placement of thermocouple elements and welding, it is difficult to realize automatic production, which requires a lot of labor, and the process loss is difficult to control, especially due to cutting The internal damage of the thermocouple element, the pretreatment process (cleaning, hanging solder, etc.), handling and improper operation of the thermocouple element before welding will cause the thermocouple element to be damaged.

The hidden danger of internal damage to the thermocouple element will cause a decrease in the reliability of the device during use

[0015] Due to the long production process and the large number of welding points, each thermocouple element has two welding points, and a finished thermopile with only 128 pairs of elements has 512 welding points, which is completed by manual operation in an open environment. Low, product quality and output are difficult to guarantee

[0016] Due to the space limitation of the component welding operation, the distance between the thermoelectric components cannot be reduced, so that the component mounting density is limited, and the cooling capacity per unit area of ​​the device is limited.

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