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High pressure method for preparing Bi-Te alloy series thermoelectric material

A technology of thermoelectric materials and alloys, which is applied in the field of high-voltage preparation of bismuth-tellurium alloy series thermoelectric materials, can solve the problems of high brittleness, low thermoelectric conversion efficiency, low strength, etc., and achieve good matching, high thermoelectric performance and machinability and work The effect of stability

Inactive Publication Date: 2006-05-10
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing problems are low thermoelectric conversion efficiency (thermoelectric figure of merit ZTmax≤1), high brittleness, and low strength. For this reason, scientists have carried out a lot of research work

Method used

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  • High pressure method for preparing Bi-Te alloy series thermoelectric material
  • High pressure method for preparing Bi-Te alloy series thermoelectric material
  • High pressure method for preparing Bi-Te alloy series thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] (1) Powder metal bismuth, antimony selenium and tellurium and dopant Bi or SbI are mixed according to the stoichiometric ratio 3 Put it into a nylon mixing tank and mix it by ball milling for 10 hours to fully mix it.

[0023] (2) The mixture obtained in the previous step was dried at 100°C for 10 hours, then cold-pressed at 20MPa, and then placed in a vacuum furnace at a constant temperature of 420°C for 4 hours in Ar gas, so that the raw materials could be fully reacted and synthesized.

[0024] (3) The above-mentioned synthesized samples are crushed by a vibrating crusher until the particle size is below 77 μm.

[0025] (4) The crushed product is cold-pressed at 20 MPa according to the size requirements of the ultra-high pressure mold.

[0026] (5) Put the molded product into a mold for ultra-high pressure sintering, and sinter at 410° C. for 2 minutes under 1.5 GPa.

Embodiment 2

[0028] (1) Powder metal bismuth, antimony selenium and tellurium and dopant Bi or SbI are mixed according to the stoichiometric ratio 3 Put it into a nylon mixing tank and mix it by ball milling for 10 hours to fully mix it.

[0029] (2) The mixture obtained in the previous step was dried at 100°C for 10 hours, then cold-pressed at 20MPa, and then placed in a vacuum furnace at a constant temperature of 460°C for 3 hours in Ar gas, so that the raw materials could be fully reacted and synthesized.

[0030] (3) The above-mentioned synthesized samples are crushed by a vibrating crusher until the particle size is below 77 μm.

[0031] (4) The crushed product is cold-pressed at 20 MPa according to the size requirements of the ultra-high pressure mold.

[0032] (5) Put the molded product into a mold for ultra-high pressure sintering, and sinter at 420° C. for 1.5 minutes under 3 GPa.

Embodiment 3

[0034] (1) Powder metal bismuth, antimony selenium and tellurium and dopant Bi or SbI are mixed according to the stoichiometric ratio 3 Put it into a nylon mixing tank and mix it by ball milling for 10 hours to fully mix it.

[0035] (2) The mixture obtained in the previous step was dried at 100°C for 10 hours, then cold-pressed at 20 MPa, and then placed in a vacuum furnace at a constant temperature of 500°C for 2 hours in Ar gas, so that the raw materials could be fully reacted and synthesized.

[0036] (3) The above-mentioned synthesized samples are crushed by a vibrating crusher until the particle size is below 77 μm.

[0037] (4) The crushed product is cold-pressed at 20 MPa according to the size requirements of the ultra-high pressure mold.

[0038] (5) Put the formed product into a mold for ultra-high pressure sintering, and sinter at 410° C. for 1 minute under 6 GPa.

[0039] The electrical conductivity, Seebeck coefficient, power factor, dimensionless figure of meri...

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Abstract

The invention provides a method for preparing thermoelectric material of bismuth tellurium alloy series in high pressure, belonging to the thermoelectric material technique. The formula of thermoelectric material of bismuth tellurium alloy series is Bi0.5Sb1.5Te2.91Se0.99 or Bi1.8Sb0.2Te2.85Se0.15 which individually uses the Bi and SbI3 as doping phase. The inventive method comprises: using the solid metal bismuth-tellurium-selenium-tellurium alloy or each of them as raw material; using solid phase reaction method to compound needed material under the inert atmosphere, to be destroyed into powder with certain graininess, to be cooled, shaped and sintered in different high pressures.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and in particular provides a high-voltage preparation method of bismuth-tellurium alloy series thermoelectric materials. Background technique [0002] The bismuth-tellurium alloy series thermoelectric semiconductor materials that have been most widely used since the 1950s are generally oriented polycrystalline products developed by the zone melting method. The existing problems are low thermoelectric conversion efficiency (thermoelectric figure of merit ZTmax≤1), high brittleness, and low strength. Scientists have carried out a lot of research work for this. The results show that although the high-pressure preparation of bismuth-tellurium alloy has not made much progress in improving the thermoelectric conversion efficiency, it can increase its electrical conductivity, significantly improve its mechanical properties and machinability, and has high production efficiency, which is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F3/16H10N10/01
Inventor 徐桂英吴晓峰姜华伟
Owner UNIV OF SCI & TECH BEIJING