Dedicated blade materials for line cutting of semiconductor materials

A material wire and semiconductor technology, applied in the field of blade materials, can solve the problems of unsatisfactory cutting, long production cycle, low efficiency, etc., and achieve the advantages of eliminating chemical treatment links, reducing drying energy consumption, and improving drying efficiency. Effect

Inactive Publication Date: 2006-12-27
河南晟道科技有限公司
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Problems solved by technology

However, due to the fact that the raw materials for the production of traditional silicon carbide micropowder are ordinary abrasive silicon carbide blocks, and the production methods adopt traditional technologies and processes such as ball milling, chemical treatment, overflow, natural sedimentation dehydration, coal-fired or gas-fired drying, and produce per ton of micropowder products It needs 70-80 tons of water, uses 200kg of industrial sulfuric acid, and has a long production cycle. It is a production method with high energy consumption, high pollution, and low efficiency. There are also unsatisfactory aspects in the cutting of monocrystalline silicon wafers for integrated circuits and solar single and polycrystalline silicon wafers.

Method used

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  • Dedicated blade materials for line cutting of semiconductor materials

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Embodiment Construction

[0020] The special cutting edge material for semiconductor material wire cutting according to the present invention is made by in-situ synthesis of high-purity 6H-SiC from raw materials according to the following process steps:

[0021] 1. Cyclone crushing and air classification:

[0022] Take in-situ synthesized high-purity 6H-SiC and place it in the classification wheel, set the speed of the classification wheel to 800-820rpm, and the pressure in the grinding chamber of the classification wheel to 0.7Mpa, and crush the raw materials to particles with a particle size of less than 20μm; then classify Adjust the speed of the wheel to 2500-2800rpm, and set the induced air volume of the grading wheel to 3350-3500m 3 / h, classify the crushed micropowder, and separate the micropowder particles with a particle size of 4-20 μm for use;

[0023] 2. Water pre-classification, overflow treatment fine separation:

[0024] Take the micropowder obtained in the first step and put it in the...

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Abstract

The invention discloses a specific cutting knife-material of semiconductor material wire (6H-SiC), which comprises the following steps: 1. grinding through cyclone; grading flow; 2. grading water pretreatment; grading finely for overflow; 3. wetting to blend; dehydrating eccentrically; separating; 5. drying through microwave continuously; 6. blending dryly. The invention is compatible with flexibility of black carbofrax, which improves anti-grinding property obviously.

Description

technical field [0001] The invention relates to a blade material, in particular to a special blade material for wire cutting of semiconductor materials. Background technique [0002] Due to its high hardness and certain toughness, silicon carbide powder is not only used in various traditional grinding tools and processing methods, but also in multi-wire cutting and grinding in electronic engineering such as single crystal silicon, polycrystalline silicon, and piezoelectric crystals. It has also been widely used. However, due to the fact that the raw materials for the production of traditional silicon carbide micropowder are ordinary abrasive silicon carbide blocks, and the production methods adopt traditional technologies and processes such as ball milling, chemical treatment, overflow, natural sedimentation dehydration, coal-fired or gas-fired drying, and produce per ton of micropowder products It needs 70-80 tons of water, uses 200kg of industrial sulfuric acid, and has a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36C04B35/565C04B35/626B02C19/00B02C23/08B03B5/00
Inventor 杨东平陶牮王力
Owner 河南晟道科技有限公司
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