An organic light-emitting display device electrode substrate
A technology for light-emitting display devices and electrode substrates, which is applied to electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of difficult etching process, prolonged substrate etching cycle, etc., and achieves improved display efficiency, reduced resistance, Deterioration prevention effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0020] Example 1
[0021] Refer to Figures 1 and 2. The electrode substrate of the organic light emitting display device of this embodiment includes ITO (150nm) serving as the electrode layer 1 and silver metal (160nm) serving as the wire layer 2, on which a sputtering method is used to prepare a vanadium metal protective layer 3 with a thickness of 15nm.
[0022] The metallic silver wire layer 2 and the metallic vanadium protective layer 3 are simultaneously etched using an etching solution with a volume ratio of phosphoric acid:nitric acid:water=9:1:3, and the etching rate is 40A / s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid: hydrochloric acid: water=1:10:10, and the etching rate is 10A / s. Through the above conditions, the structure shown in Figure 2 can be prepared. The surface resistance of the wire layer 2 is 0.1 ohm / sq. When heated at 120° C. for 30 minutes, the surface resistance is 0.11 ohm / sq, showing good stable performance. ...
Example Embodiment
[0023] Example 2
[0024] Refer to Figures 1 and 2. The electrode substrate of the organic light emitting display device of this embodiment includes ITO (150 nm) serving as the electrode layer 1 and aluminum metal (300 nm) serving as the wire layer 2. A dual-source vapor deposition method is adopted on it, and a mixture of metal indium and metal palladium is vapor-deposited as the protective layer 3. The vapor deposition quality ratio of metal indium and metal palladium is controlled to be a metal mixed layer of 9.5:1, that is, the protective layer 3 The thickness is 15nm.
[0025] The wire layer 2 of metal aluminum and the protective layer 3 of the mixture of metal indium and metal palladium are simultaneously etched using an etching solution with a volume ratio of phosphoric acid:nitric acid:water=8:1:3, and the etching rate is 30A / s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid: hydrochloric acid: water=1:10:10, and the etching rate i...
Example Embodiment
[0026] Example 3
[0027] Refer to Figures 1 and 2. The electrode substrate of the organic light emitting display device of this embodiment includes ITO (150 nm) serving as the electrode layer 1 and a copper-silver alloy (300 nm) serving as the wire layer 2. The composition of the copper-silver alloy is copper:silver=1:9. A sputtering method is used on it, and zinc oxide is sputtered as the protective layer 3, and the thickness of the protective layer 3 is 12 nm.
[0028] The copper-silver alloy wire layer 2 and the zinc oxide protective layer 3 are simultaneously etched using an etching solution with a volume ratio of phosphoric acid:nitric acid:water=9:2:3, and the etching rate is 60A / s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid: hydrochloric acid: water=1:10:10, and the etching rate is 10A / s. Through the above conditions, the structure shown in Figure 2 can be prepared. The surface resistance of the wire layer 2 is 0.25 ohm / sq. Whe...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Surface resistance | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap