Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An organic light-emitting display device electrode substrate

A technology for light-emitting display devices and electrode substrates, which is applied to electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of difficult etching process, prolonged substrate etching cycle, etc., and achieves improved display efficiency, reduced resistance, Deterioration prevention effect

Inactive Publication Date: 2007-05-30
KUNSHAN VISIONOX DISPLAY TECH +1
View PDF1 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Titanium dioxide film has good thermal stability in the air, so that the stability of the substrate during storage and processing has been significantly improved, but because titanium dioxide is too dense, the etching process of this layer is extremely difficult, making the etching beat of the substrate obvious. extend

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An organic light-emitting display device electrode substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Refer to Figures 1 and 2. The organic light-emitting display device electrode substrate of this embodiment includes ITO (150nm) serving as the electrode layer 1, and silver metal (160nm) serving as the wire layer 2, on which a vanadium metal protective layer 3 is prepared by sputtering, with a thickness of 15nm.

[0022] The metal silver wire layer 2 and the metal vanadium protective layer 3 are simultaneously etched with an etching solution with a volume ratio of phosphoric acid: nitric acid: water = 9:1:3, and the etching rate is 40A / s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid:hydrochloric acid:water=1:10:10, and the etching rate is 10A / s. Through the above conditions, the structure shown in Figure 2 can be prepared. The surface resistance of the wire layer 2 is 0.1 ohm / sq, and when heated at 120° C. for 30 minutes, the surface resistance is 0.11 ohm / sq, showing good stability.

Embodiment 2

[0024] Refer to Figures 1 and 2. The organic light emitting display device electrode substrate of this embodiment includes ITO (150 nm) used as the electrode layer 1 and aluminum metal (300 nm) used as the wiring layer 2 . On it, the method of dual-source evaporation is adopted, and the mixture of metal indium and metal palladium is evaporated as the protective layer 3, and the evaporation mass ratio of metal indium and metal palladium is controlled to be a metal mixed layer of 9.5:1, that is, the metal mixed layer of the protective layer 3 The thickness is 15nm.

[0025] The wire layer 2 of metal aluminum and the protective layer 3 of a mixture of metal indium and metal palladium are simultaneously etched with an etching solution with a volume ratio of phosphoric acid: nitric acid: water = 8:1:3, and the etching rate is 30A / s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid:hydrochloric acid:water=1:10:10, and the etching rate is 10A / ...

Embodiment 3

[0027] Refer to Figures 1 and 2. The organic light-emitting display device electrode substrate of this embodiment includes ITO (150nm) used as the electrode layer 1, and copper-silver alloy (300nm) used as the wire layer 2. The composition of the copper-silver alloy is copper:silver=1:9. A sputtering method is adopted on it, and zinc oxide is sputtered as the protective layer 3, and the thickness of the protective layer 3 is 12nm.

[0028] The copper-silver alloy wire layer 2 and the zinc oxide protective layer 3 are simultaneously etched with an etching solution with a volume ratio of phosphoric acid: nitric acid: water = 9:2:3, and the etching rate is 60A / s. The underlying ITO is etched with an etching solution with a volume ratio of nitric acid:hydrochloric acid:water=1:10:10, and the etching rate is 10A / s. Through the above conditions, the structure shown in Figure 2 can be prepared. The surface resistance of the wire layer 2 is 0.25 ohm / sq, and when heated at 120° C. fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Surface resistanceaaaaaaaaaa
Login to View More

Abstract

This invention discloses one organic light display electrode baseboard, which orderly comprises electrode layer, wire layer and protection layer composed of vanadium indium and zinc or nickel, wherein, the wire layer adopts silver, copper or aluminum metal or alloy and mixture with low electrode resistance to improve display effect; the materials is easily damaged by the oxidation or fulguration element and so this invention sets one protection layer composed of vanadium, indium or zinc or nickel element on the wire layer.

Description

technical field [0001] The invention relates to an electrode substrate, in particular to an electrode substrate of an organic light-emitting display device. Background technique [0002] Organic electroluminescent displays (OLEDs) have a series of advantages such as self-luminescence, low-voltage DC drive, full curing, wide viewing angle, and rich colors, and have broad application prospects. Among them, the electrode substrate used in the OLED display is one of the key structures that determine the performance of the device, and is usually composed of a glass substrate and an electrode layer structure attached thereto. [0003] In order to further reduce the voltage drop of the wire, metal wire layers with lower resistivity are mostly used. Metals such as chromium, copper, molybdenum, aluminum, silver, etc. are used. Among them, copper, aluminum, silver and other metals have lower resistivity, so that the product has a lower driving voltage, thereby reducing the overall p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/32H01L23/532
Inventor 邱勇刘嵩高裕弟陈珉
Owner KUNSHAN VISIONOX DISPLAY TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com