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Process of growing self-organized Ge quantum dot by means of ion beam sputtering in low growth beam flux

A technology of ion beam sputtering and quantum dots, which is applied in the field of preparation of nano-quantum materials, can solve the problems of unfavorable large-scale production, low production efficiency, and high production cost, and achieve the effects of low price, improved production efficiency, and uniform size

Inactive Publication Date: 2007-06-06
YUNNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The self-organized growth methods of Si / Ge quantum dots are mainly based on metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Complexity, low production efficiency and other issues are not conducive to mass production

Method used

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  • Process of growing self-organized Ge quantum dot by means of ion beam sputtering in low growth beam flux
  • Process of growing self-organized Ge quantum dot by means of ion beam sputtering in low growth beam flux
  • Process of growing self-organized Ge quantum dot by means of ion beam sputtering in low growth beam flux

Examples

Experimental program
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Effect test

Embodiment 1

[0021] The equipment used is the ion beam sputtering chamber of the FJL560III type ultra-high vacuum multi-target magnetron and ion beam combined sputtering equipment, and a Kaufman ion gun is placed in the growth chamber. The materials used are: the target material is a high-purity Ge square target of 5N (above 99.999%), a high-purity Si square target of 5N (above 99.999%), and the sputtering gas is a high-purity argon gas of 5N (above 99.999%). A P-type single crystal Si sheet with a crystal orientation of (100) is used as a substrate, and the resistivity is 5Ω / cm. For ultrasonic cleaning, a commercially available ultrasonic cleaner was used.

[0022] specifically is:

[0023] 1. Processing of silicon (Si) base material:

[0024] A, select the Si substrate material whose crystal orientation is (100), and ultrasonically clean it with acetone and absolute ethanol for 20 minutes respectively to remove surface organic and inorganic impurities;

[0025] B. Put the cleaned Si s...

Embodiment 2

[0031] The equipment and materials used are all the same as in Example 1. specifically is:

[0032] 1. Processing of silicon (Si) base material:

[0033] A, select the Si substrate material whose crystal orientation is (100), and ultrasonically clean it with acetone and absolute ethanol for 20 minutes respectively to remove surface organic and inorganic impurities;

[0034] B. Put the cleaned Si sheet into the following solution and soak for 20s to rinse off the oxide layer: the concentration is 40% HF: H 2 O=1:20.

[0035] 2. Alternate sputtering of Ge / Si multilayer self-organized Ge quantum dots by ion beam:

[0036] A. Place the pre-treated Si substrate material in the sputtering chamber until the background vacuum in the sputtering chamber is greater than 4.0×10 -4 Pa, adjust the temperature of the sputtering chamber to 400°C, fill the sputtering chamber with Ar gas with a purity of 5N until the pressure of the sputtering chamber is 4.0×10 -2 Pa;

[0037]B. Under the...

Embodiment 3

[0040] The equipment and materials used are all the same as in Example 1. specifically is:

[0041] 1. Processing of silicon (Si) base material:

[0042] A, select the Si substrate material whose crystal orientation is (100), and ultrasonically clean it with acetone and absolute ethanol for 20 minutes respectively to remove surface organic and inorganic impurities;

[0043] B. Put the cleaned Si sheet into the following solution and soak for 20s to rinse off the oxide layer: the concentration is 40% HF: H 2 O=1:20.

[0044] 2. Alternate sputtering of Ge / Si multilayer self-organized Ge quantum dots by ion beam:

[0045] A. Place the pre-treated Si substrate material in the sputtering chamber until the background vacuum in the sputtering chamber is greater than 4.0×10 -4 Pa, adjust the temperature of the sputtering chamber to 100°C, fill the sputtering chamber with Ar gas with a purity of 5N until the pressure of the sputtering chamber is 2.0×10 -2 Pa;

[0046] B. Under th...

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Abstract

The process of ion beam sputtering to grow self-organized Ge quantum dots in low growth beam flux includes vacuum ion beam sputtering and Ar as the work gas, and features that at the conditions of low growth beam flux current of 2mA-10mA, beam flux voltage of 0.2-1.5 KV, sputtering pressure of (1.0-4.0)x10<-2> Pa, growth temperature from room temperature to 400 deg.c, multilayer Ge / Si film with island-like self-organization grown Ge quantum dot structure is sputtering deposited on Si substrate. The present invention can obtain quantum dot material with high density and homogeneous size in a cheap industrial ion beam sputtering equipment and in high production efficiency.

Description

technical field [0001] The invention relates to a preparation method of nanometer quantum materials, in particular to a method for self-organized growth of Ge quantum dots by ion beam sputtering. technical background [0002] Quantum dots are nanometer-scale semiconductor materials or other inorganic materials prepared by modern technology. It is composed of a limited number of atoms, and its size is between macroscopic solids and microscopic atoms and molecules. In quantum dots, the movement of electrons (or holes) in three directions in space is restricted, showing many new characteristics, and the energy level structure of electrons is an atom-like discrete structure, and the energy levels have limited degeneracy. The Coulomb interaction between electrons (or holes) is very strong, and the existence of the Coulomb potential will cause changes in the energy level structure; electrons (or holes) show significant Coulomb charging effects in quantum dots; due to the quantum ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/14C23C14/54
Inventor 杨宇宋超孔令德张曙
Owner YUNNAN UNIV
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