Unlock instant, AI-driven research and patent intelligence for your innovation.

Volatile metal beta-ketoiminate complexes

A technology of metal complexes and complexes, applied in gold organic compounds, compounds containing elements of group 3/13 of the periodic table, compounds containing elements of group 8/9/10/18 of the periodic table, etc., can solve three Contamination of reaction chamber by alkylphosphine ligands, etc.

Inactive Publication Date: 2007-07-04
VERSUM MATERIALS US LLC
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, in some cases, this type of chemistry can be problematic because the released trialkylphosphine ligands can contaminate the reaction chamber and act as undesired N-type silicon dopants

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Volatile metal beta-ketoiminate complexes
  • Volatile metal beta-ketoiminate complexes
  • Volatile metal beta-ketoiminate complexes

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] Embodiment 1: synthetic H 2 NCH 2 CH 2 OSiMe 2 (C 2 h 3 )

[0075] 80.0 ml (0.57 mol) of chlorodimethylvinylsilane and 79.0 ml (0.57 mol) of triethylamine were mixed together with 2.0 liters of dry hexane and vigorously stirred at room temperature under a nitrogen atmosphere. 35.0 ml ethanolamine (0.57 mol) was slowly added over a period of 1 hour to give a white viscous slurry. The solid triethylamine hydrochloride was filtered off under nitrogen and washed with an additional 1.0 liter of dry hexane. Hexane was then distilled from the product at atmospheric pressure to yield 58.0 g (70%) of product. The NMR result of product is as follows:

[0076] 1 H NMR: (5O0MHz, C 6 D. 6 ): δ=0.15(d, 6H), δ=2.8(q, 2H), δ=3.5(t, 2H), δ=5.75(dd, 1H), δ=5.94(dq, 1H), δ=6.17 (dq, 1H).

Embodiment 2

[0077] Embodiment 2: Synthesis of MeC(O)CH 2 C(NCH 2 CH 2 OSiMe 2 (C 2 h 3 )) Me

[0078] 58.3g (0.40mol) H 2 NCH 2 CH 2 OSiMe 2 (C 2 h 3 ) was slowly added dropwise to 250 ml THF at room temperature in the presence of excess sodium sulfate and under stirring, wherein the THF contained 40 g (0.40 mol) of 2,4-pentanedione. The mixture was stirred for 4 hours, then the THF was stripped under vacuum. The residue was then distilled at 120 °C / 20 mTorr to give 35 g of the final product (43% yield). The NMR result of product is as follows:

[0079] 1 H NMR: (500MHz, C 6 D. 6 ): δ=0.15(s, 6H), δ=1.40(s, 3H), δ=2.0(s, 3H), δ=2.8(q, 2H), δ=3.27(q, 2H), δ=4.9 (s, 1H), δ=5.75(m, 1H), δ=5.95(m, 1H), δ=6.1(m, 1H).

Embodiment 3

[0080] Embodiment 3: synthetic Cu (MeC (O) CHC (NCH 2 CH 2 OSiMe 2 (C 2 h 3 ))Me)

[0081] 17.0g (0.075mol) MeC(O)CH 2 C(NCH 2 CH 2 OSiMe 2 (C 2 h 3 ))Me was dissolved in 10.0 ml of dry tetrahydrofuran (THF) solvent, and added to 100 ml of dry THF under nitrogen atmosphere in a stirring state for 1 hour, wherein the THF contained 2.5 g (40% excess, 1.04 mol ) sodium hydride, then stirred overnight at room temperature. The mixture was filtered under nitrogen and then slowly added to 7.5 g (0.075 mol) of copper(I) chloride stirred in 10 ml of dry THF at 0° C. under nitrogen over a period of 1 hour and the mixture was subsequently heated to room temperature and stirred overnight. The THF was then stripped off under vacuum and added to 500 ml of dry deoxygenated hexane and stirred for 10 minutes before filtration. After stripping the hexane under vacuum, the crude product was obtained as light blue crystals in a yield of 15.8 g (73%). After sublimation at 20 mTorr an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Metal complexes, containing copper, silver, gold, cobalt, ruthenium, rhodium, platinum, palladium, nickel, osmium, and / or indium, and methods for making and using same are described herein. In certain embodiments, the metal complexes described herein may be used as precursors to deposit metal or metal-containing films on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application No. 60 / 640338, filed December 30,2004. Background technique [0003] The semiconductor industry employs metal-containing interconnects, such as copper (Cu), in electronic devices such as, for example, prior art microprocessors. Metallic interconnects can be thin metal wires embedded in a three-dimensional grid through which the millions of transistors at the heart of a microprocessor communicate and perform complex calculations. In these and other applications, since copper is an excellent conductor of electricity, copper or its alloys may be chosen over other metals such as, for example, aluminum, resulting in higher speed interconnects with greater current carrying capability. [0004] Interconnect pathways in electronic devices are typically fabricated by a damascene process whereby channels and vias in a dielectric insulator that are patterned and etc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07F1/08C07F1/10C07F1/12C07F15/00C07F15/06C07F15/04C07F5/00C23C16/18
Inventor J·A·T·诺曼
Owner VERSUM MATERIALS US LLC