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Synthesis of chemically reactive ceria composite nanoparticles and CMP applications thereof

a composite nanoparticle, chemical reactive technology, applied in the direction of lanthanide oxide/hydroxide, manufacturing tools, other chemical processes, etc., can solve the problems of easy introduction of contaminants, difficult to obtain a narrow particle size distribution, and high energy consumption, so as to avoid the use of chemical oxidizers, reduce the risk of contamination, and reduce the effect of toxicity

Inactive Publication Date: 2005-01-06
FERRO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011] Broadly, the abrasive particles according to the invention comprise crystallites (primary particles) that include cations of cerium and cations of at least one other metal, which have been formed by hydrothermal synthesis. The abrasive particles can be used to formulate CMP slurries that provide industrially acceptable removal rates of a variety of surface films (substrates), without the need for added chemical oxidizers, which eliminates concerns about dishing and cupping. Slurries formulated using abrasive particles according to the invention exhibit a shelf life far greater than traditional CMP slurries. Another advantage provided by the abrasive particles according to the invention is that use of chemical oxidizers can be avoided, which reduces the environmental impact of producing electronic components.

Problems solved by technology

For example, it tends to be energy intensive and can produce toxic and / or corrosive gaseous byproducts.
In addition, contaminants are easily introduced during the calcination and subsequent milling processes.
Finally, it is difficult to obtain a narrow particle size distribution.
The chemical oxidizer in conventional CMP slurries tends to lose its oxidative efficacy if it remains unused for long periods.
Hence, chemical oxidizers are one of main contributors to the problem of dishing or pitting of metal surfaces, which results from continued oxidative attack on an already planar metal surface, even in the absence of abrasive particles.

Method used

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  • Synthesis of chemically reactive ceria composite nanoparticles and CMP applications thereof
  • Synthesis of chemically reactive ceria composite nanoparticles and CMP applications thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0036] An abrasive particle suitable for CMP was prepared by first dissolving 1854 g (3.38 mol) of Ce(NH4)2(NO3)6 in 3500 g of deionized water. To this solution, 100 g of Ti(isopropoxide)4 (0.35 mol) and 90 g of acetyl acetone was added. The cerium salt solution was mixed with a basic solution (containing 1000 g H2O and 1043 g of KOH) using a controlled double jet injection method with constant stirring. The slurry thus formed was diluted to a volume of 8330 mL with deionized water, and heated in a sealed stainless steel vessel, i.e., a hydrothermal reactor, at 300° C. for 6 hours with agitation. After the slurry was discharged from the hydrothermal reactor, the slurry was decanted several times before being subjected to cross-flow washing until a conductivity of 0.075 mS was achieved. The slurry was then subjected to a Dual-Frequency Reactor (Advanced Sonic Processing Systems) for sonification at a flow rate of about 50 ml / minute. The resultant final CeO2 particles exhibited a prim...

example 2

[0037] In a 500 ml beaker, 85.16 g of cerium ammonium nitrate Ce(NH4)2(NO3)6 was dissolved in 300 ml deionized water, and 6.34 grams (0.0157 mol) of ferric nitrate nonahydrate (Fe(NO3)3.9H2O) was added with stirring. The solution was diluted further by addition of 350 ml of deionized water. A basic solution was formed by dissolving 48.72 grams of potassium hydroxide (KOH) in 350 ml deionized water. The solutions (1) containing cerium ammonium nitrate and ferric nitrate and (2) the base were simultaneously introduced under stirring into a 1000 ml beaker via a controlled double jet injection method. After the solutions were added together, the resulting solution was stirred for 5 minutes and then ultrasonicated for 15 min. The solution was transferred to a sealed 1000 ml stainless steel reaction cylinder, and then placed in a preheated oven at 300° C. for 4 hours. The reaction cylinder was removed from the oven, cooled to room temperature, and the contents were transferred to a 1000 m...

example 3

[0038] A dispersion of cerium oxide-copper oxide composite nanoparticles was formed using the same materials and procedure set forth in Example 1, except that 13.36 g of copper nitrate hemipentahydrate (Cu(NO3)2.2.5H2O) was used instead of ferric nitrate nonahydrate. The Cu CMP was performed under the same conditions as in Example 1. A Cu removal rate of 2021 Å / min was obtained, indicating that Ce—Cu composite nanoparticles are chemically more active than pure CeO2 particles. The particle distribution is (d10) 158 nm, (d50) 316 nm, and (d90) 747 nm, with a crystallite size of 7.4 nm.

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Abstract

The present invention provides a method of synthesizing nanosized abrasive particles and methods of using the same in chemical mechanical polishing slurry applications. The nanosized abrasive particles according to the invention are produced by hydrothermal synthesis. The crystallites of the particles include cerium atoms and atoms of metals other than cerium. In a preferred embodiment of the invention, the crystallites exhibit a cubic crystal lattice structure. The differences in electric potential between the cerium atoms and the atoms of metals other than cerium facilitate the polishing of films without the need for chemical oxidizers.

Description

RELATED APPLICATIONS [0001] This application is a continuation-in-part of co-pending Appn. Ser. No. 10 / 255,136, filed Sep. 25, 2002, which is a continuation in part of Appn. Ser. No. 09 / 992,485, filed Nov. 16, 2001, now U.S. Pat. No. 6,596,042.FIELD OF THE INVENTION [0002] The present invention provides a process for producing abrasive particles, the abrasive particles produced according to the process, and a process for removing a film layer using a CMP slurry containing particles made by the process. BACKGROUND OF THE INVENTION [0003] Chemical-mechanical polishing (CMP) slurries are used, for example, to planarize surfaces during the fabrication of semiconductor chips and related electronic components. CMP slurries typically include reactive chemical agents and abrasive particles dispersed in a liquid carrier. The abrasive particles perform a grinding function when pressed against the surface being polished using a polishing pad, and separately, the reactive chemical agents serve ...

Claims

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Application Information

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IPC IPC(8): C01F17/224C01F17/235C01G23/04C01G23/053C03C19/00C09C1/36C09C1/68C09K3/14
CPCB82Y30/00C01F17/0043C01G23/04C01G23/053C01P2002/60C01P2002/76C09K3/1409C01P2004/62C01P2004/64C01P2006/90C03C19/00C09C1/3653C01P2004/51C01F17/235C01F17/224
Inventor FENG, XIANGDONGHER, YIE-SHEINMAO, YUN
Owner FERRO CORP
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