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Processor

Inactive Publication Date: 2005-04-28
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008] The present invention has been made to solve the above problems, and ahs as its object to improve the process reproducibility.
[0009] According to the findings of the inventor of the present invention, when a process is to be performed in an Si-containing atmosphere, to monitor Si is effective in realizing the process with good reproducibility. In particular, Si has an absorption spectrum in an ultraviolet region, and can be measured highly sensitively with a simple method. The present invention has been made based on these findings.

Problems solved by technology

When the same process is performed with one plasma processing apparatus under the same conditions, however, each time the process is performed, the plasma state changes, and the process reproducibility is poor.
When the same process is performed with different apparatuses under the same conditions, the plasma state differs among the apparatuses, and it is difficult to perform the process with good reproducibility.
Consequently, individual substrates W cannot be processed uniformly.

Method used

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first embodiment

[0028]FIG. 1 is a diagram showing the arrangement of a high-frequency plasma CVD apparatus according to the first embodiment of the present invention. A process chamber 1 serving as a processing vessel accommodates a susceptor 2 for placing thereon a glass substrate W as a target object. An electrostatic chuck or mechanical chuck (not shown) to bring the glass substrate W into tight contact with the susceptor 2 is prepared for the susceptor 2. The susceptor 2 incorporates a heater 3 for heating the glass substrate W to a predetermined temperature. The temperature of the heater 3 is changed in accordance with a control signal S5 output from a controller 44 (to be described later). An exhaust port 4 is formed in the lower portion of the chamber 1, and is connected to a vacuum pump 4A. The vacuum pump 4A adjusts the pressure in the chamber 1 in accordance with a control signal S6 output from the controller 44.

[0029] A gas introducing nozzle 11 is arranged in the upper portion of the c...

second embodiment

[0057] The volume of the chamber 1 is constant. Under a constant pressure, the density of radicals contained in the plasma P is inversely proportional to the temperature of a gas containing molecular or atomic radicals. For example, the higher the gas temperature, the lower the radical density. Also, the higher the gas temperature, the higher the radical speed. When measuring the radical density by absorption spectroscopy, as the gas temperature increases, the number of radicals appearing on the optical path of the ultraviolet light UV increases. Then, the attenuation amount of the ultraviolet light UV passing through the plasma P increases, so that the radical density is measured to be larger than it actually is. Accordingly, to perform parameter control based on the plasma density more accurately, the gas temperature must be considered. A high-frequency plasma CVD apparatus that has such a function will be described.

[0058]FIG. 2 is a diagram showing the arrangement of a high-freq...

third embodiment

[0067]FIG. 3 is a diagram for explaining an example of a high-frequency plasma CVD apparatus according to the third embodiment of the present invention. FIG. 3 shows a section perpendicular to the central axis of a chamber 1. The same constituent elements as those shown in FIG. 1 are denoted by the same reference numerals. For the descriptive convenience, FIG. 3 shows an X-Y coordinate system having the center of the chamber 1 as the origin.

[0068] In this embodiment, a plurality of optical paths of ultraviolet light UV used for radical density measurement are set on a plane parallel to the stage surface of a susceptor 2. For example, as shown in FIG. 3, when the respective optical paths are to be set parallel to the X-axis, the absolute values of the Y-coordinates of the respective optical paths are set to be different from each other.

[0069] Input mirrors 61A, 61B, 61C, 61D, 61E, 61F, and 61G which reflect UV output from a hollow cathode lamp 41 and guide it to the corresponding o...

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Abstract

A processing apparatus includes a vessel (1) which accommodates a target object (W), ultraviolet light-generating means (41) for outputting ultraviolet light (UV) toward an atmosphere (P) containing radicals in the vessel (1), ultraviolet light-receiving means (42) for receiving the ultraviolet light (UV) passing through the atmosphere (P), and analysis control means (43, 44) for obtaining a density of the radicals in the atmosphere (P) on the basis of an output signal from the ultraviolet light-receiving means (42), to control a process parameter. The density of the radicals can be held at a constant level, and process reproducibility can be improved.

Description

BACKGROUND OF THE INVENTION [0001] The present invention relates to a processing apparatus for performing processes in an Si-containing atmosphere. [0002] In the manufacture of a semiconductor device, flat panel display, and organic EL (electro luminescent panel) display, plasma processing apparatuses are widely used to perform processes such as formation of an insulating film, e.g., an oxide film, crystal growth of a semiconductor layer, etching, and ashing. A high-frequency plasma CVD apparatus will be described as a prior art example of the plasma processing apparatus. FIG. 6 is a diagram showing the arrangement of the main part of a conventional high-frequency plasma CVD (Chemical Vapor Deposition) apparatus. [0003] The CVD apparatus shown in FIG. 6 includes a process chamber 101 and a plasma source which generates plasma P with high frequency. The chamber 101 accommodates a susceptor 102 for placing a substrate W thereon. The susceptor 102 incorporates a heater 103 which heats ...

Claims

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Application Information

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IPC IPC(8): C23C16/48H01J37/32H01L21/00
CPCC23C16/482H01L21/67253H01J37/32935
Inventor GOTO, TOSHIOHORI, MASARUISHII, NOBUO
Owner TOKYO ELECTRON LTD