Film forming apparatus and film forming method

a film forming and film technology, applied in the direction of coatings, chemical vapor deposition coatings, metallic material coating processes, etc., can solve the problems of large installation space, inability to form flat films, and process not being effectively performed in a long time, so as to reduce the installation space of the facility

Inactive Publication Date: 2005-12-08
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0008] The present invention is made from the above-described point of view. An object of the present invention is to provide a film forming apparatus and a film forming method

Problems solved by technology

Thus, the facility becomes large.
In addition, a wafer has to be transferred between the systems and, as a result,

Method used

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  • Film forming apparatus and film forming method
  • Film forming apparatus and film forming method
  • Film forming apparatus and film forming method

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Embodiment Construction

[0034] Next, with reference to the accompanying drawings, an embodiment of the present invention will be described.

[0035] In the embodiment, a fabrication method for a semiconductor device having a laminated film composed of three layers of insulation films in FIG. 5D will be described.

[0036] As shown in FIG. 5D, a lower layer wiring 201 is formed on a semiconductor wafer W (hereinafter abbreviated as wafer W). On the lower layer wiring 201, an inter-layer insulation film composed of layers of laminated films is formed. The inter-layer insulation film is composed of a porous insulation film 202, a non-porous insulation film 203, and a porous insulation film 204. A porous insulation film is a film made with processing a foaming material. In the inter-layer insulation film, for example through-holes (not shown) are formed. Via the through-holes, a wiring (not shown) that is made of a conductive material and formed on the inter-layer insulation film and the lower layer wiring 201 are...

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PUM

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Abstract

An apparatus for forming a film on a wafer comprising, a first coating apparatus coating a foaming insulation film material on the wafer, a second coating apparatus coating a non-porous insulation film material on the wafer, a low oxygen heating temperature regulating process apparatus performing a heating process on the wafer on which the foaming insulation film material is coated, a low oxygen high temperature heating process apparatus performing the heating process on the water on which the non-foaming insulation film material is coated, a transfer mechanism transferring the wafer to these apparatuses, and a selecting means selecting a path to which the wafer is transferred corresponding to the film formed on the wafer.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a film forming apparatus that forms a porous insulation film and a non-porous insulation film on a substrate such as a semiconductor wafer. [0003] 2. Description of the Related Art [0004] An insulation film is formed on a substrate in such a manner that an insulation film material is coated on the substrate, dried, and heated. A system that integrally performs a series of processing steps such as a coating process, a drying process, and a heating process for an insulation film material is known. [0005] Recently, the improvement of the insulating characteristic of an insulation film has been required. In order to meet the requirement, a porous insulation film has been used. For such a coating material, a material such that contains porogen in an insulation film material like methyl silsesquioxane (hereinafter abbreviated as MSQ) is used. In addition, after the coating process for such...

Claims

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Application Information

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IPC IPC(8): H01L21/00
CPCH01L21/6715H01L21/67225H01L21/67207H01L21/67178
Inventor ISHIDA, HIROSHI
Owner TOKYO ELECTRON LTD
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