Semiconductor light emitting device, method of manufacturing same, and optical module

a technology of semiconductors and light emitting devices, which is applied in the direction of semiconductor lasers, nanotechnology, lasers, etc., can solve the problems of difficult crystal formation and short life, and achieve the effect of prolonging life and prolonging li

Inactive Publication Date: 2006-08-24
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a semiconductor light emitting device with a long life. By controlling the impurity concentration of hydrogen and aluminum in the active layer, the device can operate for a long time without experiencing a significant decrease in brightness. The method of manufacturing the device involves using an organic nitrogen compound with a low flow rate, which results in a low impurity concentration of hydrogen in the active layer. The use of a barrier layer with a thickness per one layer in the range from 1 nm to 8 nm further prolongs the life of the device. The semiconductor light emitting device and the optical module using it have a long life, making them suitable for various applications.

Problems solved by technology

However, there has been a disadvantage that when the GaNAs materials are used, it is difficult to form favorable crystal and the life is short.

Method used

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  • Semiconductor light emitting device, method of manufacturing same, and optical module
  • Semiconductor light emitting device, method of manufacturing same, and optical module
  • Semiconductor light emitting device, method of manufacturing same, and optical module

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Embodiment Construction

[0025] Descriptions will be given of an embodiment of the present invention in detail with reference to the drawings.

(Semiconductor Light Emitting Device)

[0026]FIG. 1 shows a cross sectional structure of a laser diode 10, which is a semiconductor light emitting device according to an embodiment of the present invention. The laser diode 10 is a long-wavelength laser with an oscillation wavelength used for communication and the like of 1.1 μm to 1.5 μm. For example, the laser diode 10 has a structure in which on the obverse side of a substrate 11, a first cladding layer 12, a first guide layer 13, an active layer 14, a second guide layer 15, a second cladding layer 16, an etching stop layer 17, a third cladding layer 18, and a contact layer 19 are layered sequentially from the substrate 11 side. The etching stop layer 17, the third cladding layer 18, and the contact layer 19 are made into a narrow stripe-shaped ridge, and an insulating layer 20 made of silicon dioxide (SiO2) or the...

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Abstract

A semiconductor light emitting device capable of realizing a long life, a method of manufacturing the same, and an optical module using the semiconductor light emitting device are provided. The semiconductor light emitting device has an active layer, in which a well layer made of a Ga1-xInxNyAs1-y-zSbz mixed crystal (0≦x<1, 0<y<1, 0≦z<1, and 0<y+z<1) and a barrier layer made of a GaNvAs1-v mixed crystal (0≦v<1) are layered. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized. The hydrogen concentration can be decreased by decreasing the flow rate of the organic nitrogen compound used as a raw material of nitrogen when the active layer is grown.

Description

CROSS REFERENCES TO RELATED APPLICATIONS [0001] The present invention contains subject matter related to Japanese Patent Application JP 2005-042771 filed in the Japanese Patent Office on Feb. 18, 2005, the entire contents of which being incorporated herein by reference. BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a semiconductor light emitting device in which an active layer includes a well layer made of a compound semiconductor containing at least gallium (Ga), arsenic (As), and nitrogen (N), a method of manufacturing the semiconductor light emitting device, and an optical module. [0004] 2. Description of the Related Art [0005] In these years, since information volume has been increased and communication speed has become high, optical communication using optical fiber has been increasingly demanded. Accordingly, development of light emitting devices for optical communication in 1.3 μm band or 1.5 μm band, in which transmissio...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01S5/00H01S5/20B82Y20/00H01S5/343
CPCB82Y20/00H01S5/22H01S5/3235H01S5/343
InventorSATO, YASUOMITOMO, JUGOYOKOZEKI, MIKIHIROHINO, TOMONORINARUI, HIRONOBU
OwnerSONY CORP