Bottom resist layer composition and patterning process using the same

Inactive Publication Date: 2006-10-19
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0047] The bottom resist layer composition of the present invention can be suitably used for a patterning process in which the pattern circuit area is exposed with ArF excimer laser at a wavelength of 193 nm or KrF excimer laser at a wavelength of 248 nm, thereby a pattern can be formed with higher precision.
[0048] As mentioned above, according to the present invention, a bottom resist layer composition having those characteristics as follows can be obtained. An etching rate during etching with CF4/CHF3 gas, Cl2/BCl3 gas, etc. used for processing a substrate is slower

Problems solved by technology

The increase of surface roughness after etching becomes serious due to copolymerization of acrylate.
Furthermore, when a processed layer to be an underlayer of resist layers

Method used

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  • Bottom resist layer composition and patterning process using the same
  • Bottom resist layer composition and patterning process using the same
  • Bottom resist layer composition and patterning process using the same

Examples

Experimental program
Comparison scheme
Effect test

synthetic example 1

[0168] To a 300 mL flask 160 g of m-cresol, 50 g of 1-naphthol, 75 g of 37% formalin solution and 5 g of oxalic acid were added, and the contents were stirred at 100° C. for 24 hours. After the reaction, the contents were dissolved into 500 mL of methyl isobutyl ketone. Then, a catalyst and metallic impurities were removed by sufficient washing with water, and the solvent was removed under a reduced pressure. And the solution was subjected to a condition of at a temperature of 150° C. and at a reduced pressure of 2 mmHg, and water and unreacted monomer were removed to yield 188 g of the following polymer 1.

[0169] Molecular weight (Mw) and distribution (Mw / Mn) of polymer 1 were determined by GPC, and a ratio of repeating units in polymer 1 was determined as follows by 1H-NMR analysis.

[0170] polymer 1; a1:b1 (mole ratio)=0.8:0.2

[0171] Molecular weight (Mw)=12,000

[0172] Molecular-weight distribution (Mw / Mn)=4.60

synthetic example 2

[0173] To a 300 mL flask 160 g of m-cresol, 70 g of 1-hydroxy pyrene, 75 g of 37% formalin solution and 5 g of oxalic acid were added, and the contents were stirred at 100° C. for 24 hours. After the reaction, the contents were dissolved into 500 mL of methyl isobutyl ketone. Then, a catalyst and metallic impurities were removed by sufficient washing with water, and the solvent was removed under a reduced pressure. And the solution was subjected to a condition of at a temperature of 150° C. and at a reduced pressure of 2 mmHg, and water and unreacted monomer were removed to yield 193 g of the following polymer 2.

[0174] Molecular weight (Mw) and molecular-weight distribution (Mw / Mn) of polymer 2 were determined by GPC, and a ratio of repeating units in polymer 2 was determined as follows by 1H-NMR analysis.

[0175] polymer 2; a1:b2 (mole ratio)=0.83:0.17

[0176] Molecular weight (Mw)=12,700

[0177] Molecular-weight distribution (Mw / Mn)=4.80

synthetic example 3

[0178] To a 300 mL flask 160 g of m-cresol, 60 g of 2-hydroxy fluorene, 75 g of 37% formalin solution and 5 g of oxalic acid were added, and the contents were stirred at 100° C. for 24 hours. After the reaction, the contents were dissolved into 500 mL of methyl isobutyl ketone. Then, a catalyst and metallic impurities were removed by sufficient washing with water, and the solvent was removed under a reduced pressure. And the solution was subjected to a condition of at a temperature of 150° C. and at a reduced pressure of 2 mmHg, and water and unreacted monomer were removed to yield 190 g of the following polymer 3.

[0179] Molecular weight (Mw) and a molecular-weight distribution (Mw / Mn) of polymer 3 were determined by GPC, and a ratio of repeating units in polymer 3 was determined as follows by 1H-NMR analysis.

[0180] polymer 3; a1:b3 (mole ratio)=0.75:0.25

[0181] Molecular weight (Mw)=10,800

[0182] Molecular-weight distribution (Mw / Mn)=4.30

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Abstract

There is disclosed a bottom resist layer composition for a multilayer-resist film used in lithography which comprises, at least, a polymer having a repeating unit represented by the following general formula (1). Thereby, there can be provided a bottom resist layer composition which shows an antireflection effect against an exposure light by combining with an intermediate resist layer having an antireflection effect if necessary, has a higher etching resistance during etching a substrate than polyhydroxy styrene, cresol novolac resin, etc., has a high poisoning-resistant effect, and is suitable for using in a multilayer-resist process like a bilayer resist process or a trilayer resist process.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a bottom resist layer composition useful for a multilayer-resist process used for micropatterning in production process of semiconductor devices etc, and especially to a bottom resist layer composition of a trilayer resist film suitable for exposure with far ultraviolet rays at a wavelength of 300 nm or less like KrF excimer laser light (248 nm) and ArF excimer laser light (193 nm). Furthermore, the present invention also relates to a patterning process for forming a pattern on a substrate with lithography using the composition. [0003] 2. Description of the Related Art [0004] It has been needed to make a finer pattern rule along with a tendency in which integration and speed of LSI have become higher in recent years. And in lithography using optical exposure which is used as a general technique at present, resolution has almost reached the inherent limit derived from a wavelength of ...

Claims

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Application Information

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IPC IPC(8): G03F7/26G03C1/00
CPCG03F7/094G03F7/0752G03F7/091
Inventor HATAKEYAMA, JUN
Owner SHIN ETSU CHEM IND CO LTD
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