EL display device

a technology of el and display device, which is applied in the manufacture of electrode systems, cold cathodes, electric discharge tubes/lamps, etc., can solve the problems of devices in the light intensity of el devices, and achieve the effects of reducing the average film resistance of the anode, preventing light leakage, and low electrical resistivity

Inactive Publication Date: 2006-12-21
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0028] In the EL display device having the above-described configuration in accordance with the present invention, light emitted from the EL device passes through the counter substrate to be emitted to reach the viewer's eyes. Accordingly, the viewer can recognize an image through the counter substrate side. In this situation, one of the features of the EL display device in accordance with the present invention is that the metal film 109 having a low electrical resistivity is disposed on the anode 108 included in the EL device so that the gaps 111 between the adjacent pixel electrodes 105 are concealed by the metal film 1...

Problems solved by technology

When a film resistance of the anode in the device section increases, the in-plane distribution of electrical potentials in the anode ...

Method used

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embodiment 1

[0091] The embodiments of the present invention are explained using FIGS. 4A to 6C. A method of simultaneous manufacturing of a pixel portion, and TFTs of a driver circuit portion formed in the periphery of the pixel portion, is explained here. Note that in order to simplify the explanation, a CMOS circuit is shown as a basic circuit for the driver circuits.

[0092] First, as shown in FIG. 4A, a base film 301 is formed with a 300 nm thickness on a glass substrate 300. Silicon oxynitride films are laminated as the base film 301 in embodiment 1. It is good to set the nitrogen concentration at between 10 and 25 wt % in the film contacting the glass substrate 300.

[0093] Besides, as a part of the base film 301, it is effective to provide an insulating film made of a material similar to the first passivation film 41 shown in FIG. 2. The current controlling TFT is apt to generate heat since a large current is made to flow, and it is effective to provide an insulating film having a heat rad...

embodiment 2

[0165] Although the description has been made on the case of the top gate type TFT in the embodiment 1, the present invention is not limited to the TFT structure, and may be applied to a bottom gate type TFT (typically, inverted stagger type TFT). Besides, the inverted stagger type TFT may be formed by any means.

[0166] Since the inverted stagger type TFT has such a structure that the number of steps can be easily made smaller than the top gate type TFT, it is very advantageous in reducing the manufacturing cost, which is the object of the present invention. Incidentally, the structure of this embodiment can be freely combined with any structure of the embodiment 1.

embodiment 3

[0167]FIG. 3B shows that the amount of the off current value in the switching TFT in the pixel of the EL display device is reduced by using a multi-gate structure for the switching TFT, and the need for a storage capacitor is eliminated. However, it is also acceptable to make a structure of disposing a storage capacitor as is done conventionally. In this case, as shown in FIG. 12, a storage capacitor 1301 is formed in parallel to the gate of the current controlling TFT 202 with respect to the drain of the switching TFT 201.

[0168] Note that the constitution of embodiment 3 can be freely combined with any constitution of embodiments 1 and 2. Namely, a storage capacitor is merely formed within a pixel and it is not to limit the TFT structure, materials of EL layer, etc.

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Abstract

An EL display device capable of reducing an average film resistance of an anode in an EL device as well as displaying an image with high definition, and electrical equipment including such an EL display device are provided. A light-shielding metal film 109 is provided on an anode 108 so as to conceal gaps between the pixels. Thus, an average film resistance of the anode 108 in the EL device is reduced. Furthermore, light leakage from the gaps between the pixels can be prevented, resulting in an image display with high definition.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to an EL (electro-luminescence) display device fabricated by forming a semiconductor device (a device utilizing a semiconductor thin film; typically a thin film transistor) onto a substrate. The present invention further relates to an electrical equipment including such an EL display device as a display section. [0003] 2. Description of the Related Art [0004] Recently, a technique for forming a thin film transistor (hereinafter referred to as TFT) onto a substrate has significantly advanced, and its application to an active-matrix display device has been developed. In particular, the TFT employing a polysilicon film therein has a field effect mobility higher than that of the conventional TFT employing an amorphous silicon film, and therefore, can operate at higher speed. Thus, a control function for pixels that is conventionally performed by an external driver circuit provided at the ou...

Claims

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Application Information

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IPC IPC(8): H05B33/10H01L51/56H01L27/32H05B33/26H01L51/52
CPCH01L27/3244H01L27/3248H01L51/5212H01L2251/5315H01L51/5284H01L51/529H01L51/5281H10K59/123H10K59/12H10K50/814H10K50/86H10K50/87H10K50/865H10K2102/3026H05B33/26
Inventor NISHI, TAKESHIISHIMARU, NORIKO
Owner SEMICON ENERGY LAB CO LTD
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