Tungsten based sintered compact and method for production thereof

Inactive Publication Date: 2007-07-26
NIPPON TUNGSTEN CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0084] As above, the tungsten-based sintered body of the present invention is a high-density homogeneous tungsten-based sintered body which has a small volume or number of pores, a high recrystallization temperature, an isotropic characteristic in hardness, thermal conductivity or thermal expansion coefficient, and a significantly small difference in hardness, thermal conductivity or thermal expansion coefficient between a surface portion and an inside portion thereof.
[0085] By taking advantage of these characteristics, the

Problems solved by technology

The first disadvantage is that the sintered body has an extremely poor flexibility in shape due to the need for sintering the rod-shaped powder compact in a given gas atmosphere while applying a pulsed current to the powder compact through the electrodes connected to the respective ends thereof.
This leads to a considerable increase in production cost.
The second disadvantage is that a sufficient density cannot be obtained without an additional process after the sintering.
While the sintered compact may be subjected to a forging process, such as a swaging process, to provide enhanced density, the restriction in shape will become more severe.
Further, if it is attempted to obtain a relatively large sintered body with a sufficient density through a plastic working process, such as a forging process, it is necessary to allow the sintered compact before the forging process to have a larger size causing the need for a single-purpose facility requiring a

Method used

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  • Tungsten based sintered compact and method for production thereof
  • Tungsten based sintered compact and method for production thereof
  • Tungsten based sintered compact and method for production thereof

Examples

Experimental program
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Effect test

example 1

[0110] Example 1 is one example of a discharge lamp electrode formed of the tungsten-based sintered body of the present invention.

[0111] A tungsten powder having a purity of 99.99% and an average particle size of 0.8μ was used as a starting material.

[0112] The powder was subjected to die pressing at a pressure of 2 MPa to form a cylindrical-shaped preform of φ 100×250. This preform was put in a hermetically-closable rubber bag and subjected to a CIP process at a pressure of 400 MPa.

[0113] A powder compact after the CIP process had a size of φ 80×200 and a density of about 11 g / cm3.

[0114] This powder compact was formed in a discharge-lamp-electrode shape having a cylindrical column with a hemispherical head, using a lathe.

[0115] The machined powder compact was sintered in a hydrogen gas atmosphere at a temperature of 1800° C. for a holding time of 6 hours. The powder compact was heated to 1000° C. at a heating rate of 10° C. / min and then heated to 1800° C. at a heating rate of 4...

example 2

[0121] In the same manner as Example 1 except for the raw powder and a shape of the sintered body, a sputtering target, a crucible, a radiation shielding member, a resistance welding electrode, a semiconductor element mounting substrate and a switch contact were produced. Table 4 shows their advantages in performance and cost, based on the sintered body of the present invention.

TABLE 4ProductComparative ProductFeatureAdvantageSputtering TargetTungsten sputtering target with aSmall number of poresPrevention of uneven wearingdensity of less than 99.5%Low contaminationHigh purityLow contaminationUniform structurePrevention of uneven wearingCrucibleTungsten crucible with a densitySmall number of poresLow contaminationof less than 99.5%Intermediate working OKLow production costRadiation ShieldingTungsten shielding plateHigh densityHigh shielding effectMemberobtained through a forgingIntermediate working OKLow production costprocessResistance WeldingTungsten chip for a resistanceSmall n...

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Abstract

The present invention is directed to provide a tungsten-based sintered body having a relative density of 99.5% or more (a porosity of 0.5 volume % or less) and a uniform and isotropic structure, which has not been able to be achieved by conventional techniques. In particular, the tungsten-based sintered body is intended for use as a discharge lamp electrode, a sputtering target, a crucible, a radiation shielding member or a resistance welding electrode. The intended tungsten-based sintered body is produced by subjecting a tungsten-based powder to a CIP process at a pressure of 350 MPa or more to form a powder compact, sintering the powder compact in a hydrogen gas atmosphere at a sintering temperature of 1600° C. or more for a holding time of 5 hours or more to form a sintered compact, and subjecting the sintered compact to a HIP process in an argon gas atmosphere under conditions of 150 MPa or more and 1900° C. or more. The tungsten-based sintered body of the present invention is suitably used, for example, as a discharge lamp electrode, a sputtering target, a crucible, a radiation shielding member, an electric discharge machining electrode, a semiconductor element mounting substrate and a structural member.

Description

TECHNICAL FIELD [0001] The present invention relates to a tungsten-based sintered body and a production method therefor. [0002] The present invention also relates to a product of the tungsten-based sintered body, such as a discharge lamp electrode, a sputtering target, a crucible, a radiation shielding member, a resistance welding electrode, a semiconductor element mounting substrate, a structural member, a switch contact, a member for semiconductor manufacturing equipment, a member for an ion-implantation apparatus or an internal member for a nuclear fusion reactor. BACKGROUND ART [0003] Typically, a tungsten-based sintered body has been produced by use of a “electric current-aided sintering process” which is designed to apply a high-voltage pulsed current to a rod-shaped tungsten-based powder compact through a pair of electrodes attached, respectively, to opposite ends of the powder compact, so as to sinter the powder compact. [0004] The electric current-aided sintering process ha...

Claims

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Application Information

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IPC IPC(8): C22C29/12B22F3/15C22C27/04H01J61/067H01J61/073
CPCB22F3/15H01J61/0675C22C27/04B22F2999/00H01J61/0735B22F2998/10B22F3/04B22F3/1007B22F2201/11B22F2201/013
Inventor SHIBUYA, TAKUJITERAMOTO, SHUICHIMATSUO, SHIGERUSAKAGUCHI, SHIGEYA
Owner NIPPON TUNGSTEN CORP
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