Contact structure of a wires and method manufacturing the same, and thin film transistor substrate including the contact structure and method manufacturing the same

Abstract

In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads. The sidewall of the under-layers for the gate line assembly and the data line assembly is exposed through the contact holes. An IZO-based layer is deposited onto the substrate, and patterned to thereby form pixel electrodes, subsidiary gate pads, and subsidiary data pads. The pixel electrodes are connected to the sidewall of the drain electrodes, and the subsidiary gate and data pads are connected to the sidewall of the gate and the data pads.

Description

BACKGROUND OF THE INVENTION [0001] (a) Field of the Invention [0002] The present invention relates to a contact structure wiring line for a thin film transistor array substrate, and a method of fabricating the same. [0003] (b) Description of the Related Art [0004] Generally, a wiring line assembly is formed at a semiconductor device to transmit signals while involving the requirement of minimization in signal delay. [0005] In order to minimize the signal delay, the wiring line assembly is usually formed with a low resistance metallic material such as aluminum and aluminum alloy. However, as the aluminum-based metallic material involves weak physico-chemical characteristic, erosion is liable to be made at the wiring line assembly when it contacts other conductive materials at the contact area, and this deteriorates the performance characteristics of the semiconductor device. Particularly in the case of a liquid crystal display, as the pixel electrode is formed with a transparent cond...

AI Technical Summary

Benefits of technology

This approach effectively reduces contact resistance and prevents erosion, ensuring reliable signal transmission with low resistance characteristics suitable for liquid crystal displays.

Problems solved by technology

However, as the aluminum-based metallic material involves weak physico-chemical characteristic, erosion is liable to be made at the wiring line assembly when it contacts other conductive materials at the contact area, and this deteriorates the performance characteristics of the semiconductor device.

Particularly in the case of a liquid crystal display, as the pixel electrode is formed with a transparent conductive material such as indium tin oxide (ITO), the aluminum-based layer being in contact with the ITO-based electrode is liable to be eroded.

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