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Dielectric device

a dielectric device and dielectric film technology, applied in the field of dielectric devices, can solve the problems of difficult enhancement of dielectric crystallinity and high manufacturing cost, and achieve the effect of increasing the throughput of deposition process and easy improvement of dielectric film crystallinity in the dielectric devi

Inactive Publication Date: 2013-12-05
TDK CORPARATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention provides a dielectric device with improved crystallinity and lower manufacturing costs. The device uses electrode films with higher oxidation-reduction potential than the dielectric film, preventing reduction of the dielectric film by the electrodes and improving its stability and reliability. The electrode films can be composed of aluminum, titanium, zirconium, tantalum, chromium, cobalt, or nickel, or their alloys. Additionally, an electroconductive oxide film can be used to prevent degradation of the device, further improving its performance. The invention makes it possible to replace the materials of the electrode films with inexpensive materials and increase the throughput of the deposition process.

Problems solved by technology

In the case of the conventional dielectric devices, however, it is not easy to enhance the crystallinity of the dielectric and manufacturing cost thereof is also high.

Method used

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Examples

Experimental program
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Effect test

example 1

Dielectric Device 100A

[0090]In a state in which an Si substrate 1 was heated at 400° C., a Pt film was epitaxially grown in the thickness of 50 nm on the surface orientation of the Si substrate 1 by sputtering to obtain a (100) preferentially oriented metal film 2 on the Si substrate 1. A growth rate of the Pt film was 0.2 nm / sec. Thereafter, in a state in which the Si substrate 1 was heated at 550° C., a potassium sodium niobate (KNN) film was epitaxially grown as dielectric film 3 in the thickness of 2000 nm on the metal film 2 by sputtering to obtain a (110) preferentially oriented dielectric film 3. Subsequently, at room temperature, an Ni film was deposited in the thickness of 200 nm on the dielectric film 3 by sputtering to obtain an amorphous electrode film 4. Thereafter, the electrode film 4 was bonded to an Si support substrate 5 by an epoxy resin layer 7. Thereafter, the Si substrate 1 was removed from the metal film 2 by an etching process based on RIE. Then an Ni film wa...

example 2

Dielectric Device 100B

[0091]A dielectric device 100B was obtained in the same manner as in Example 1, except that the metal film 2 was also etched in addition to the Si substrate 1 in the removal of the Si substrate 1.

example 3

Dielectric Device 100C

[0092]A dielectric device 100C was obtained in the same manner as in Example 2, except that intermediate films 9 of a non-oriented structure composed of Ti were provided in the thickness of 5 nm between the dielectric film 3 and the two electrode films 4, 8 by sputtering. The dielectric device 100C was improved in adhesion of the dielectric film 3 to the electrode film 4 and the electrode film 8.

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Abstract

A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a dielectric device.[0003]2. Related Background Art[0004]There are conventionally known dielectric devices having a dielectric film and a pair of electrode films laid on both sides of the dielectric film, as disclosed in Patent Literatures 1 to 5.[0005]Patent Literature 1: Japanese Patent Application Laid-open No. 2010-103194[0006]Patent Literature 2: Japanese Patent Application Laid-open No. 2009-094449[0007]Patent Literature 3: Japanese Patent Application Laid-open No. 2008-211385[0008]Patent Literature 4: Japanese Patent Application Laid-open No. 2007-277606[0009]Patent Literature 5: Japanese Patent Application Laid-open No. 2006-286911SUMMARY OF THE INVENTION[0010]In the case of the conventional dielectric devices, however, it is not easy to enhance the crystallinity of the dielectric and manufacturing cost thereof is also high. The present invention has been accomplished in view of ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L41/047H01L41/04H10N30/00H10N30/06H10N30/071H10N30/87H10N30/072H10N30/074H10N30/079H10N30/09H10N30/80H10N30/853H10N97/00
CPCH10N30/877H10N30/708C30B23/02Y10T29/42H01L28/55H10N30/06H10N30/09H10N30/071H10N30/072H10N30/074
Inventor KURACHI, KATSUYUKISAKUMA, HITOSHIAIDA, YASUHIROMAEJIMA, KAZUHIKONAKAJIMA, MAYUMI
Owner TDK CORPARATION
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