Method of manufacturing gold thin film by using electroless-plating method
a technology of electroless plating and gold, applied in the direction of liquid surface applicators, coatings, metal material coating processes, etc., can solve the problems of a few intrinsic weaknesses of vapor deposition methods, not only a long time taken for such electric contact, and laborious and expensive equipment, etc., to achieve the effect of improving the activity of raman scattering
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example 1
Manufacturing Au Thin Film
[0032]A cover glass having a diameter of 18 mm (manufactured by Marienfeld) was soaked in an alkaline cleaning solution (pH=9.2; and 0.5% Hellmanex II, Hellma) for 3 hours and then was sonicated in distilled water for 10 minutes. Next, the cover glass was washed with ethanol and then was finally dried in an oven at a temperature of 60° C. for 30 minutes. The washed cover glass was dipped in a reaction mixture and then the reaction mixture was vigorously stirred at a temperature of 50° C. Here, the reaction time was varied from 20 minutes to 80 minutes. The reaction mixture was obtained by mixing an aqueous solution containing 0.5 mL of 0.1 M HAuCl4 and 1 mL of 1 M K2CO3 with 8.5 mL of methanol solution, and at this time, the pH of the reaction mixture was adjusted to 11 to 12. An Au-coated glass obtained as such was washed with ethanol and then dried in air.
[0033]For self-assembly of BT on the Au-coated glass, the Au-coated glass was immersed in a 10 mM met...
example 2
Analyzing Properties of Au Thin Film
[0034]1. Methods of Analyzing Properties
[0035]UV-vis spectra were obtained by using a spectrum analyzer (Avantes 3648), and field emission scanning electron microscopic (FE-SEM) images were obtained by using a field emission scanning electron microscope (JSM-6700F) that operated at 5.0 kV.
[0036]XRD was analyzed by using an X-ray diffractometer (Rigaku Model MiniFlex powder diffractometer) using Cu Kα radiation. Also, XPS measurements were performed by using an AXISH model using Mg Kα X-ray as a light source.
[0037]SERS was analyzed by using a spectroscope (Renishaw Raman System Model 2000) equipped with an integral microscope (Olympus BH2-UMA). The 632.8 nm line from a 17 mW He / Ne laser (Spectra Physics Model 127) was used as an excitation source. A Raman band of a silicon wafer at 520 cm−1 was used to calibrate the spectroscope. Accuracy of a measured spectrum value was at least 1 cm−1.
[0038]Atomic force microscopic (AFM) images were obtained by u...
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