Electro-Absorption Optical Modulator Including Ground Shield
a ground shield and optical modulator technology, applied in the direction of laser output parameters control, laser details, instruments, etc., can solve the problems of affecting the performance of an eml, the frequency response of the eam component, and the upper practical limit of the modulation rate of the incoming electrical signal, so as to minimize the spread of the applied ac voltage, improve the frequency response of the electro-absorption modulator, and mitigate the
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[0024]Referring to FIG. 1, an exemplary prior art electro-absorption modulator (EAM) 1 is depicted as a capacitive structure that functions to absorb photons within a semiconductor active region, converting the absorbed photons into free electron-hole pairs via the Franz-Keldysh effect (or the Quantum Confined Stark effect, as a function of the type of active region included in the modulator). That is, the application of a modulated electrical signal to the anode of the structure functions to transform a propagating CW optical wave into a modulated output optical signal. Here, EAM 1 is shown as comprising an n-type InP substrate 2 that is separated from a p-type InP layer 3 by an active region 4 that comprises one or more intrinsic layers having a lower bandgap than InP, such as an InGaAsP or an InGaAlAs multiple quantum well (MQW) epitaxial layer sequence. The combination of these semiconductor regions thus forming the modulator's diode structure 5. An electrode 6 is disposed over ...
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