The invention discloses a local back surface field passivation contact cell and a preparation method thereof. The cell comprises a silicon wafer main body, a boron diffusion layer, a front passivation film, a positive electrode, a tunneling oxide layer, a field passivation layer, a back passivation film and a back electrode; the boron diffusion layer, the front passivation film and the positive electrode are sequentially laid on the front surface of the silicon wafer main body; the tunneling oxide layer, the field passivation layer, the back passivation film and the back electrode are sequentially laid on the back surface of the silicon wafer main body; and the field passivation layer is provided with a first region and a second region which are different in doping concentration. The field passivation layer is provided with the first region and the second region which are different in doping concentration, the first region is in contact with the back electrode of the cell, namely a metal contact area, the high doping concentration is achieved, and it is guaranteed that the first region has small electrode contact resistance and electron tunneling resistance; and the second region is not in contact with the back electrode of the cell, namely a non-metal contact region, so that the doping concentration is relatively low, auger recombination of the non-metal contact region is reduced, parasitic absorption of the non-metal contact region is further reduced, and the conversion efficiency of the tunneling oxidation passivation contact cell is improved.