Solution for fabrication of electron-emitting devices, manufacture method of electron-emitting devices, and manufacture method of image-forming apparatus

Abstract

In a solution for forming electron-emitting regions of electron-emitting devices, the solution contains a metal carboxylate expressed by the following general formula (I), an organic solvent <DEL-S DATE="20021029" ID="DEL-S-00001" / >and / or<DEL-E ID="DEL-S-00001" / > <INS-S DATE="20021029" ID="INS-S-00001" / >, and <INS-E ID="INS-S-00001" / >water;where k=<DEL-S DATE="20021029" ID="DEL-S-00002" / >numeral from<DEL-E ID="DEL-S-00002" / > 1 <DEL-S DATE="20021029" ID="DEL-S-00003" / >to 4<DEL-E ID="DEL-S-00003" / > , m=<INS-S DATE="20021029" ID="INS-S-00002" / >a <INS-E ID="INS-S-00002" / >numeral from 1 to 4, and <DEL-S DATE="20021029" ID="DEL-S-00004" / >R=CnX2n+1-k<DEL-E ID="DEL-S-00004" / > <INS-S DATE="20021029" ID="INS-S-00003" / >R=CnX2n+2-k <INS-E ID="INS-S-00003" / >where X=<INS-S DATE="20021029" ID="INS-S-00004" / >a <INS-E ID="INS-S-00004" / >hydrogen or halogen <DEL-S DATE="20021029" ID="DEL-S-00005" / >(total number of hydrogen and halogen atoms is 2n+1)<DEL-E ID="DEL-S-00005" / > , n=<INS-S DATE="20021029" ID="INS-S-00005" / >an <INS-E ID="INS-S-00005" / >integer from 0 to 30, and M=<INS-S DATE="20021029" ID="INS-S-00006" / >a <INS-E ID="INS-S-00006" / >metal<INS-S DATE="20021029" ID="INS-S-00007" / >, wherein the organic solvent is a carboxylic ester having the same carboxylic group as R(COO)k expressed in the general formula (I)<INS-E ID="INS-S-00007" / >. In a manufacture method of electron-emitting devices each provided between electrodes with a conductive film including an electron-emitting region, a process of forming the conductive film includes a step of coating and calcining the above solution. An image-forming apparatus is manufactured by using the electron-emitting devices. Variations in sheet resistance values of electron-emitting region-forming thin films and characteristics of the electron-emitting devices are reduced.

Description

BACKGROUND OF THE INVENTION1. Field of the InventionThe present invention relates to a solution for fabrication of electron-emitting devices which is used to form electron-emitting regions of the electron-emitting devices, and manufacture methods of electron-emitting devices, electron sources, and image-forming apparatus based on the use of the solution.2. Related Background ArtThere are hitherto known two types of electron-emitting devices; i.e., thermionic cathode devices and cold cathode devices. Cold cathode devices include the field emission type (hereinafter abbreviated to FE), the metal / insulating layer / metal type (hereinafter abbreviated to MIM), the surface conduction type, etc.Examples of FE electron-emitting devices are described in, e.g., W. P. Dyke & W. W. Doran, "Field emission", Advance in Electron Physics, 8, 89 (1956) and C. A. Spindt, "Physical properties of thin-film field emission cathodes with molybdenum cones", J. Appl. Phys., 47, 5248 (1976).One example of MIM...

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