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Solution for fabrication of electron-emitting devices, manufacture method of electron-emitting devices, and manufacture method of image-forming apparatus

a technology of electron-emitting devices and manufacturing methods, which is applied in the manufacture of electrode systems, electric discharge tubes/lamps, liquid/solution decomposition chemical coatings, etc., can solve the problems of uneven thickness and resistance value of films, uneven characteristics of devices in a lot, and uneven electrical resistance of thinned films

Inactive Publication Date: 2002-10-29
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

An object of the present invention is to provide an organic metal compound capable of solving the problem of unevenness in film thickness experienced in the prior art, and also to provide an electron-emitting region-forming thin film from which an electron-emitting region can be formed by the conventional energization treatment called Forming.

Problems solved by technology

This results in a problem of unevenness in the film thickness and the resistance value.
This raises a problem that electrical resistances of the thinned films are not uniform and, hence, characteristics of devices in a lot are not uniform.

Method used

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  • Solution for fabrication of electron-emitting devices, manufacture method of electron-emitting devices, and manufacture method of image-forming apparatus
  • Solution for fabrication of electron-emitting devices, manufacture method of electron-emitting devices, and manufacture method of image-forming apparatus
  • Solution for fabrication of electron-emitting devices, manufacture method of electron-emitting devices, and manufacture method of image-forming apparatus

Examples

Experimental program
Comparison scheme
Effect test

example 1

As an electron-emitting device of this Example, an electron-emitting device of the type shown in FIGS. 1A and 1B was fabricated. FIGS. 1A and 1B are respectively a plan and sectional views of the device. In FIGS. 1A and 1B, denoted by reference numeral 1 is an insulating base plate, 5 and 6 are device electrodes for applying a voltage to the device, 4 is a thin film including an electron-emitting region, and 3 is an electron-emitting region. Additionally, in FIGS. 1A and 1B, L1 represents the spacing between the device electrodes 5 and 6, W1 the width of the device electrodes, d the thickness of the device electrodes, and W2 the width of the device.

The manufacture process of the electron-emitting device of this embodiment will be described below with reference to FIGS. 2A to 2C.

A quartz plate was used as the insulating base plate 1 and, after sufficiently washing it with an organic solvent, the device electrodes 5, 6 made of Ni were formed on the surface of the base plate 1 (FIG. 2A...

example 2

In a similar manufacture process of electron-emitting devices as in above Example 1, a coating solution was prepared by dissolving, as an organic metal compound, 0.01 mol (2.488 g) of nickel acetate (4 hydrates) in 100 ml of water. The coating solution was coated on the insulating base plate 1 including the device electrodes 5, 6 formed thereon by using a spinner. The base plate was then heated to 350.degree. C., causing the organic metal compound to be decomposed and deposited on the base plate to form a fine particle film comprising nickel oxide fine particles (average size: 60 angstroms), thereby producing an electron-emitting region-forming thin film 2 (FIG. 2B). It was confirmed by X-ray analysis that the fine particles were made of nickel oxide.

example 3

A coating solution was prepared by dissolving, as an organic metal compound, 0.01 mol (2.249 g) of palladium acetate in 1000 ml of butyl acetate. The coating solution was coated on the insulating base plate 1 including the device electrodes 5, 6 formed thereon by using a spinner made by Mikasa Co. Ltd. at 1000 rpm for 30 seconds.

As a result of X-ray analysis (XD) of the coated film in this Example, it was confirmed that the diffraction patterns of Pd acetate observed in X-ray analysis (powder XD) was not found and the coated film had no crystallinity.

The base plate was then heated to 300.degree. C. inside an oven in an atmosphere of air, causing the organic metal compound to be decomposed and deposited on the base plate to form a fine particle film comprising palladium oxide fine particles (average size: 75 angstroms), thereby producing an electron-emitting region-forming thin film 2 (FIG. 2B).

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Abstract

In a solution for forming electron-emitting regions of electron-emitting devices, the solution contains a metal carboxylate expressed by the following general formula (I), an organic solvent <DEL-S DATE="20021029" ID="DEL-S-00001" / >and / or<DEL-E ID="DEL-S-00001" / > <INS-S DATE="20021029" ID="INS-S-00001" / >, and <INS-E ID="INS-S-00001" / >water;where k=<DEL-S DATE="20021029" ID="DEL-S-00002" / >numeral from<DEL-E ID="DEL-S-00002" / > 1 <DEL-S DATE="20021029" ID="DEL-S-00003" / >to 4<DEL-E ID="DEL-S-00003" / > , m=<INS-S DATE="20021029" ID="INS-S-00002" / >a <INS-E ID="INS-S-00002" / >numeral from 1 to 4, and <DEL-S DATE="20021029" ID="DEL-S-00004" / >R=CnX2n+1-k<DEL-E ID="DEL-S-00004" / > <INS-S DATE="20021029" ID="INS-S-00003" / >R=CnX2n+2-k <INS-E ID="INS-S-00003" / >where X=<INS-S DATE="20021029" ID="INS-S-00004" / >a <INS-E ID="INS-S-00004" / >hydrogen or halogen <DEL-S DATE="20021029" ID="DEL-S-00005" / >(total number of hydrogen and halogen atoms is 2n+1)<DEL-E ID="DEL-S-00005" / > , n=<INS-S DATE="20021029" ID="INS-S-00005" / >an <INS-E ID="INS-S-00005" / >integer from 0 to 30, and M=<INS-S DATE="20021029" ID="INS-S-00006" / >a <INS-E ID="INS-S-00006" / >metal<INS-S DATE="20021029" ID="INS-S-00007" / >, wherein the organic solvent is a carboxylic ester having the same carboxylic group as R(COO)k expressed in the general formula (I)<INS-E ID="INS-S-00007" / >. In a manufacture method of electron-emitting devices each provided between electrodes with a conductive film including an electron-emitting region, a process of forming the conductive film includes a step of coating and calcining the above solution. An image-forming apparatus is manufactured by using the electron-emitting devices. Variations in sheet resistance values of electron-emitting region-forming thin films and characteristics of the electron-emitting devices are reduced.

Description

BACKGROUND OF THE INVENTION1. Field of the InventionThe present invention relates to a solution for fabrication of electron-emitting devices which is used to form electron-emitting regions of the electron-emitting devices, and manufacture methods of electron-emitting devices, electron sources, and image-forming apparatus based on the use of the solution.2. Related Background ArtThere are hitherto known two types of electron-emitting devices; i.e., thermionic cathode devices and cold cathode devices. Cold cathode devices include the field emission type (hereinafter abbreviated to FE), the metal / insulating layer / metal type (hereinafter abbreviated to MIM), the surface conduction type, etc.Examples of FE electron-emitting devices are described in, e.g., W. P. Dyke & W. W. Doran, "Field emission", Advance in Electron Physics, 8, 89 (1956) and C. A. Spindt, "Physical properties of thin-film field emission cathodes with molybdenum cones", J. Appl. Phys., 47, 5248 (1976).One example of MIM...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): C23C18/12C23C18/00H01J9/02H01J1/316
CPCC23C18/1216C23C18/1295H01J1/316H01J9/027H01J2201/3165
Inventor TOMIDA, YOSHINORIHASHIMOTO, HIROYUKI
Owner CANON KK
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