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Praseodymium boride nano line, and its preparing method and use

A praseodymium hexaboride and nanowire technology is applied in the field of praseodymium hexaboride nanowires and their preparation, and achieves the effects of excellent field emission performance, easy operation and repetition, and simple test process

Inactive Publication Date: 2007-11-14
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation method of praseodymium hexaboride nanowires with one-dimensional structure has not been reported yet.

Method used

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  • Praseodymium boride nano line, and its preparing method and use
  • Praseodymium boride nano line, and its preparing method and use
  • Praseodymium boride nano line, and its preparing method and use

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) Put the single crystal silicon wafer substrate with 1g of Pr powder (particle size about 0.1-0.5mm) into the middle of the quartz tube of the tube electric furnace, seal the quartz tube, and pre-evacuate the quartz tube at the same time, and then pass in H 2 / Ar(H 2 : Ar=0.1), its flow rate is 10 sccm;

[0031] (2) Heat the tube electric furnace to 970°C, and then feed BCl 3 , the flow rate is 100 sccm; at the same time, adjust the protective and reducing gas flow rate to 200 sccm; keep for 60 minutes;

[0032] (3) After the reaction, lower the temperature (flow rate is not limited) in the atmosphere of a mixture of protective gas and reducing gas (flow rate is not limited), until cooled to room temperature.

[0033] (4) Take out the monocrystalline silicon wafer substrate, soak it in distilled water for 4 hours, and then dry it in an oven. The obtained substance on the substrate is the praseodymium hexaboride nanowire.

[0034] Fig. 1 is a SEM photograph of the...

Embodiment 2

[0036] (1) Put the monocrystalline silicon substrate with 0.5g of Pr powder (particle size about 0.1-0.5mm) into the middle of the quartz tube of the electric tube furnace, seal the quartz tube, and pre-evacuate the quartz tube at the same time, and then pass it into h 2 / Ar(H 2 : Ar=1), its flow velocity is 60 sccm;

[0037] (2) Heat the tube electric furnace to 1050°C, then feed BCl 3 , the flow rate is 60 sccm; at the same time adjust the protective and reducing gas flow rate to 120 sccm; keep for 30 minutes;

[0038] (3) After the reaction, lower the temperature (flow rate is not limited) in the atmosphere of a mixture of protective gas and reducing gas (flow rate is not limited), until cooled to room temperature.

[0039] (4) Take out the monocrystalline silicon wafer substrate, soak it in distilled water for 4 hours, and then dry it in an oven. The obtained substance on the substrate is the praseodymium hexaboride nanowire.

[0040] Fig. 2 is the X-ray diffraction (...

Embodiment 3

[0046] (1) Put the single crystal silicon wafer substrate with 0.1g of Pr powder (particle size about 0.1-0.5mm) into the middle of the quartz tube of the electric tube furnace, seal the quartz tube, and pre-evacuate the quartz tube at the same time, and then pass it into h 2 / Ar(H 2 : Ar=10), its flow rate is 100 sccm;

[0047] (2) Heat the tube electric furnace to 1150°C, and then feed BCl3 , the flow rate is 10 sccm; at the same time, adjust the protective and reducing gas flow rate to 20 sccm; keep it for 10 minutes;

[0048] (3) After the reaction, lower the temperature (flow rate is not limited) in the atmosphere of a mixture of protective gas and reducing gas (flow rate is not limited), until cooled to room temperature.

[0049] (4) Take out the monocrystalline silicon wafer substrate, soak it in distilled water for 4 hours, and then dry it in an oven.

[0050] Fig. 6 is the present embodiment sample PrB 6 The SEM photo of the nanowires, it can be seen from the figu...

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Abstract

The invention discloses a praseodymium hexaborate nano line and the preparing method and application thereof, firstly placing a monocrystalline silicon wafer substrate with praseodymium source in the middle of quartz tube of a tube electric furnace, sealing the quartz tube and simultaneously prevacuumizing the quartz tube, then charging protective and reducing gases; heating the tube electric furnace to 970- 1150 deg.C, charging boron source and keeping 10-60 min; cooling in the mixed gas atmosphere to obtain the nano line with diameter of 50-300 nm and length of 1-4 mum, where the boron source is BCl5, the reducing gas is H2, and the protective gas is Ar gas. And the prepared nano line has high output, good crystallization degree, excellent emission property, lower starting voltage, and a better application prospect in the aspect of field electron emission display material.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, in particular to nanowires of praseodymium hexaboride and its preparation method and application. Background technique [0002] Lanthanum hexaboride, as a field emission material providing a high-performance electron source, is widely used in modern science and technology. And praseodymium hexaboride in RB 6 (R=rare earth) series have relatively low work function, high melting point, good performance at high temperature, and small evaporation rate. According to the research of Davis et al., praseodymium hexaboride, like lanthanum hexaboride, can be used as a field emission cathode material. As field emission materials, they also have the most significant advantage of being able to output a large emission current density, which is very important for application in field electron emission devices. [0003] If one-dimensional praseodymium hexaboride nanomaterials are used as emission guns i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B35/04C01F17/00
Inventor 赵彦明许军旗邹春云丁琪玮
Owner SOUTH CHINA UNIV OF TECH
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