Organic electro luminescence device and its manufacturing method
An electroluminescent device, organic technology, applied in the direction of electroluminescent light source, electro-solid device, semiconductor/solid-state device manufacturing, etc., can solve the problem of not being able to ensure the uniformity of organic functional layer evaporation at the same time, adverse device overall performance and yield It can not significantly improve the contrast of the device and other problems, so as to achieve the effect of saving equipment investment costs, saving production management costs, and improving life expectancy.
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[0068] Example 1.
[0069] (The whole preparation process of OLED is implemented in the purification workshop) The ITO glass with a sheet resistance of 10Ω is washed successively with UV irradiation and a lotion containing surfactants, and then dried. The film thickness of ITO is 180nm. Carve a set of parallel and divided straight lines with a line width of 100μm and a line gap of 15μm. It was cleaned and dried again, and the first layer of organic insulating material negative cyclized rubber was spin-coated on the ITO pattern, with a film thickness of 1.1 μm, and baked in a hot plate at 100°C for 90 seconds. The first layer is exposed but not developed. The exposed pattern is a mesh structure, that is, only the light-emitting area and lead connection area of the device pixels are exposed. The line width parallel to the ITO line is 30μm, and the line perpendicular to the ITO line The width is 30μm. Then, the second layer of negative photoresist ZPN1168, which is an insulating ma...
Example Embodiment
[0070] Example 2.
[0071] (The entire preparation process of OLED is implemented in the purification workshop) The ITO glass with a sheet resistance of 15Ω is cleaned and dried with UV irradiation and a lotion containing surfactants. The film thickness of ITO is 170nm. A set of parallel and divided straight lines are formed, the line width is 400 μm, and the line gap is 30 μm. Clean and dry again, spin-coating the first layer of organic insulating material photosensitive PI DL-1000 on the ITO pattern, with a film thickness of 1.5 μm, and bake it in a convection oven at 125°C for 25 minutes. The first layer is exposed but not developed. The exposed pattern is a mesh structure, that is, only the light-emitting area and lead connection area of the device pixels are exposed. The line width parallel to the ITO line is 45μm, and the line perpendicular to the ITO line The width is 40 μm. Then, the second layer of negative photoresist ZPN1168, which is a second layer of insulating mate...
Example Embodiment
[0072] Example 3.
[0073] (The entire preparation process of OLED is implemented in the purification workshop.) Wash the ITO glass with a sheet resistance of -4 The organic functional layer and the metal layer are vapor-deposited in a vacuum furnace above Pa. The organic functional layer consists of CuPc, NPB and Alq 3 The composition and the film thickness are 20nm, 70nm and 50nm respectively. The metal layer is composed of Mg:Ag alloy (evaporation rate ratio 10:1, alloy mass ratio 4:1) and Ag in sequence, and the film thickness is 100 nm and 300 nm, respectively. The device is packaged in an inert atmosphere. The lighting voltage of the device is 2.7V, the light is uniform, and the current density is 20mA / cm 2 When the luminous efficiency is 4.51m / W, the device life>5000
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