TaWN film in copper interlinked barrier layer material

A technology of barrier layer and copper interconnection, applied in metal material coating process, coating and other directions, can solve the problem of barrier layer failure and other problems, and achieve the effect of reducing channel, low resistivity and excellent adhesion

Inactive Publication Date: 2008-04-16
SHANGHAI JIAOTONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the research on TaWN in this paper is only an exploratory one, and the composition selection has great randomness. There is no systematic research on the influence of different W contents on the barrier properties of TaWN films, and after annealing at 700°C for 30 minutes, copper has diffused through the barrier layer to the silicon substrate, forming Cu 3 Si, the barrier layer has begun to fail, compared with traditional TaN x Compared with that, the failure temperature is only increased by 50-100°C

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Example 1 TaWN thin film, its component weight percentage is: W 13.6%, N 9%, and the rest is Ta.

[0017] The alloy target was prepared according to the ratio, and a 50nm thick TaWN film was deposited on a silicon substrate by reactive magnetron sputtering, and then a layer of 120nm thick copper was deposited on the TaWN in situ without breaking the vacuum. The back vacuum of the reaction chamber is 10 -3 Pa, the partial pressure of Ar gas during sputtering is 8×10 -2 Pa, N 2 The divided voltage is 2×10 -2 Pa.

[0018] Through various performance tests, the TaWN of the present invention is in an amorphous state, and the TaN crystal phase does not form until half an hour after vacuum annealing at 800°C, and copper diffuses to the silicon substrate through the barrier layer, forming a Cu 3 Si, eventually leading to the failure of the barrier layer. Its barrier performance is better than that of WN prepared under the same conditions x and TaN x Thin film; the resist...

Embodiment 2

[0019] Example 2 TaWN thin film, its component weight percentage is: W 16.4%, N 9% and the rest is Ta.

[0020] The alloy target was prepared according to the ratio, and a 50nm thick TaWN film was deposited on a silicon substrate by reactive magnetron sputtering, and then a layer of 120nm thick copper was deposited on the TaWN in situ without breaking the vacuum. The back vacuum of the reaction chamber is 10 -3 Pa, Ar gas partial pressure is 8×10 -2 Pa, N 2 The divided voltage is 2×10 -2 Pa.

[0021] Through various performance tests, the TaWN of the present invention is in an amorphous state, and after half an hour of vacuum annealing at 850 ° C, the WN x Decomposition occurs, nitrogen is released, W crystallizes, TaN also crystallizes, copper diffuses to the silicon substrate through the barrier layer, forming Cu 3 Si, eventually leading to the failure of the barrier layer.

[0022] TaWN maintains TaN x Excellent adhesion and low resistivity characteristics with coppe...

Embodiment 3

[0023] Example 3 TaWN thin film, its component weight percentage is: W 17.3%, N 9% and the rest is Ta.

[0024] The alloy target was prepared according to the ratio, and a 50nm thick TaWN film was deposited on a silicon substrate by reactive magnetron sputtering, and then a layer of 120nm thick copper was deposited on the TaWN in situ without breaking the vacuum. The back vacuum of the reaction chamber is 10 -3 Pa, the partial pressure of Ar gas during sputtering is 8×10 -2 Pa, N 2 The divided voltage is 2×10 -2 Pa.

[0025] According to various performance tests, the TaWN of the present invention is in an amorphous state. After half an hour of vacuum annealing at 850 ° C, due to the release of nitrogen and the crystallization of W and TaN, copper diffuses to the silicon substrate through the barrier layer, forming Cu 3 Si, eventually leading to the failure of the barrier layer. Its barrier performance is better than that of WN prepared under the same conditions x and Ta...

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Abstract

A TaWN film used as the barrier material of copper interconnection contains W (13.6-22.7 Wt%), N (9) and Ta (rest). Its advantages are high adhesion and high power to resist against electronic migration.

Description

technical field [0001] The invention relates to a thin film in the technical field of materials, in particular to a TaWN thin film of a copper interconnect barrier layer material. Background technique [0002] As the feature size of integrated circuit devices enters deep sub-micron, the integration density will further increase, and the chip will develop towards multi-function and high speed, all of which require the width of metal wiring to be reduced and the number of wiring layers to be increased. However, the reduction of the connection width will cause the increase of the connection resistance, the increase of the interconnection delay time of the circuit, and the sharp increase of the time delay RC of the overall interconnection, which far exceeds the influence of the local interconnection on the total delay of the interconnection, becoming A key factor in determining chip performance, the so-called "interconnect crisis" occurs. In order to reduce the interconnection ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C30/00
Inventor 凌惠琴陈寿面李明毛大立杨春生
Owner SHANGHAI JIAOTONG UNIV
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