Epitaxial thin films

An epitaxial thin film and thin film technology, applied in the field of epitaxial thin films of dielectric materials
CN100385696CInactive Publication Date: 2008-04-30MICROCOATING TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
MICROCOATING TECH
Publication Date
2008-04-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary / interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
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Description

[0001] government contract

[0002] Rights in this invention are vested in the United States Government under Contract Nos. F33615-98-C-5418 of the Department of Defense, Contract Nos. DE-FG02-97ER82345, ACQ-9-29612-01, and 4500011833 of the United States Department of Energy.

[0003] related application

[0004] This application claims priority to US Provisional Patent Application No. 60 / 115,519, filed January 12, 1999, which is hereby incorporated by reference in its entirety. field of invention

[0005] The present invention relates to epitaxial thin films, and more particularly, the present invention relates to epitaxial thin films useful especially as buffer layers for high temperature superconductors, electrolytes for solid oxide fuel cells (SOFCs), gas separation membranes, or dielectric materials for electronic components. background of the invention

[0006] Although it has been demonstrated in the past to deposit epitaxial coatings on textured substrates, the ...

Claims

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