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Manufacturing method ofCapacitor of high-performance metal/insulator/metal structure

A metal structure and capacitor technology, used in thin film/thick film capacitors, semiconductor/solid-state device manufacturing, multilayer capacitors, etc., can solve problems such as poor reliability and large leakage current, achieve precise thickness control, reduce leakage, and improve The effect of breakdown strength

Inactive Publication Date: 2008-06-18
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for the commercialized traditional insulating dielectric SiO 2 (κ=~4) and Si 3 N 4 (κ=7), the thinning of the thickness will lead to a large leakage current, even tunneling current, resulting in poor reliability

Method used

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  • Manufacturing method ofCapacitor of high-performance metal/insulator/metal structure
  • Manufacturing method ofCapacitor of high-performance metal/insulator/metal structure
  • Manufacturing method ofCapacitor of high-performance metal/insulator/metal structure

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Embodiment 1

[0031]The capacitor device is an essential device in the radio frequency bypass circuit, and its function is to filter out the interference entering from the sensitive area. In order to filter out the low-frequency noise that is harmful to the radio frequency, the bypass capacitor is generally required to have a larger capacitance value. In mobile communication equipment, it is hoped that the capacitor plate area should be as small as possible, so as to increase the integration density. Therefore, capacitor devices with high capacitance density are required, while maintaining low leakage current, capacitor voltage and temperature coefficient as small as possible.

[0032] Using TaN as the upper and lower metal electrodes, Al grown by atomic layer deposition 2 o 3 / HfO 2 Nano laminated thin film as insulating dielectric layer, Al 2 o 3 The thickness of the single layer is 0.5-1.5nm, HfO 2 The thickness of the single layer is 5-15nm, and the dielectric layer connected to th...

Embodiment 2

[0035] In analog / mixed-signal circuits, capacitive devices are generally used as holding capacitors to hold voltage for sampling and signal restoration. Increasing the capacitance can keep the voltage attenuation, but it will increase the sampling time, so it is necessary to choose a low-leakage capacitor with good environmental stability. Therefore, capacitors must have low leakage current, low voltage and temperature coefficients, and high capacitance density.

[0036] Using TaN as the upper and lower metal electrodes, Al grown by atomic layer deposition 2 o 3 / HfO 2 Nano laminated thin film as insulating dielectric layer, Al 2 o 3 The thickness of the single layer is 0.5-1.5nm, HfO 2 The thickness of the single layer is 5-15nm, and the dielectric layer connected to the upper and lower metal electrodes is Al 2 o 3 single layer. The insulating dielectric layer is made of Al 2 o 3 and HfO 2 Layers grow alternately. The preparation conditions are as follows: the thi...

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Abstract

This invention relates to a high performance metal / insulator / metal (MIM) condenser suitable for RF, analog and mixed signal IC and its preparation method, in which, said condenser takes the Al2O3 / HfO2 nm lamination structure prepared by an electronic layer deposition method as the insulation medium and TaN as the upper and lower electrodes, which can meet the requirement of RF by-pass condensers and analog condensers.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuit manufacturing, and in particular relates to a method for preparing a high-performance capacitor. technical background [0002] Capacitive devices are introduced into radio frequency integrated circuits and mixed signal integrated circuits for decoupling, signal filtering and oscillation generation in circuits. In the past, these capacitive devices used polysilicon-insulator-polysilicon (PIP) structure or metal-oxide layer-silicon substrate (MOS) structure [1，2] However, both polysilicon and MOS substrates are limited to depletion effects, which will generate parasitic capacitance, resulting in unnecessary capacitance changes and bias voltage disturbances. At the same time, non-metal electrodes will generate large parasitic resistance, which seriously affects the function of capacitance in high-frequency working environment. For radio-frequency circuits and analog-digital...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/00H01L29/92H01L21/02H01L21/314H01L21/8242H01G4/33H10B12/00
Inventor 丁士进黄宇健张卫
Owner FUDAN UNIV