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Nuclear radiation detector and producing technology thereof

A nuclear radiation detector and manufacturing process technology, applied in the field of nuclear radiation detectors, can solve problems such as inability to realize simultaneous measurement, poor long-term stability, poor energy resolution, etc., and achieve excellent electrical characteristics and detection characteristics, and excellent energy resolution The effect of high rate and good position resolution

Inactive Publication Date: 2008-07-23
INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the Au-Si surface barrier detector has a large surface leakage current, and its reverse leakage current is mainly determined by the surface leakage current. Therefore, its reverse leakage current is also large, so the noise is large, the energy resolution is poor, and the long-term stability Not good, not suitable for high temperature
The previous ion-implanted resistive distributed position-sensitive detectors can obtain good position resolution, but their energy resolution is very poor, which is 4 to 5 times worse.
And it is not possible to have several detectors measure at the same time

Method used

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  • Nuclear radiation detector and producing technology thereof

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Embodiment 1

[0032] Example 1: see figure 1 , nuclear radiation detector, the effective area is 50×20mm 2 Silicon substrate, N type, detection window 1 is composed of 16 detection windows 1 parallel to each other, each silicon strip is 3mm wide, 20mm long, with B + The doped region 3 forms a PN junction, on which there is an Al layer 2 and a lead 7 is provided; between the two detection windows 1 there is SiO 2 Divider 4, SiO 2 The width of the division area is 140μm; there are P on the back of the silicon substrate - doped region 5, forming N + An ohmic contact, on which an Al layer 6 forms the back electrode. The resistivity of the silicon substrate is 8000-12000 Ω·cm, the thickness is 300 μm, the crystal orientation [111], the charge carrier lifetime is 1-3 ms, and there is no dislocation. The lead wire 7 is connected to the radio frequency cable socket.

Embodiment 2

[0033] Embodiment 2: The manufacturing process of nuclear radiation detector:

[0034] A. Surface oxidation passivation: use N-type silicon wafers, after cleaning, generate 7000 When the surface is oxidized and passivated, the atmosphere of chloride ions is brought in by nitrogen through trichlorethylene liquid, the flow rate is 0.2 liters / minute, the flow rate of oxygen is 6 liters / minute, and the temperature is 950 ° C ~ 1050 ° C .

[0035] B. Photolithographic detector detection window 1 .

[0036] C. Ion implantation: implant B on the detector detection window 1 side + ions, the implanted ion concentration is 5×10 13 / cm 2 -1×10 14 / cm 2 .

[0037] D. Remove the SiO on the back of the silicon substrate 2 layer, injected into P - Phosphorus ion concentration is 5×10 15 / cm 2 -1×10 16 / cm 2 . P -Doped region 5 forms N + The thickness of the layer is 1.5 to 2.0 μm.

[0038] E. After ion implantation, anneal to form PN junction and N + Ohmic contact, the ann...

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Abstract

The present invention mainly relates to a nuclear radiation detector, in particular, it relates to a position sensitive detector used in the high-energy physics and nuclear physics and its production process. Said detector includes silicon substrate, N-type, it is mainly characterized by that it also includes detection window, it is formed from mutually-parallelized detection windows, it has B+ doped region, forming PN Gunction, on it an Al-layer is set, and is equipped with a lead; between two windows an insulated separating zone is set; back surface of silicon substrate has P- doped region, forming N+ ohmic contact, on it an Al-layer is coated to form back electrode. Said invention also provides the concrete steps of its production method.

Description

Technical field: [0001] The invention mainly relates to a nuclear radiation detector, in particular to a position sensitive detector used in high-energy physics and nuclear physics and its manufacturing process. Background technique: [0002] Detectors are important for both high-energy and nuclear physics. In nuclear reactions, in order to obtain information about the nuclear-nuclear collision process and its dynamics, it is necessary to know the angular distribution of the outgoing particles or the angular correlation of the outgoing particles. For this reason, the measurement of the energy and position (angular distribution) of nuclear reaction products is the most important. For example, in nuclear reactions, the angular distribution of elastic scattering directly reflects the size of the nuclear potential and the contribution of angular momentum. The above-mentioned measurements must be carried out by means of position-sensitive detectors. Over the past few decades, w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/29G01T1/24
Inventor 谭继廉靳根明田大宇宁宝俊王小兵王宏伟段利敏袁小华李松林卢子伟马连荣徐瑚珊
Owner INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI
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