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Plus photoresist composition and resist pattern forming method

A positive resist and resist pattern technology, which is applied in the photoengraving process of the pattern surface, the application of radioactive source radiation, and the photosensitive material used in optomechanical equipment, etc., can solve the problem of resolution, insufficient depth of focus, etc. question

Inactive Publication Date: 2008-08-13
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the positive resist using this polymer, although the problem of scumming has been improved, there are still problems of insufficient resolution and depth of focus

Method used

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  • Plus photoresist composition and resist pattern forming method
  • Plus photoresist composition and resist pattern forming method
  • Plus photoresist composition and resist pattern forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0122] First prepare (A) component. That is, under an acid catalyst, the copolymer of p-hydroxystyrene and adamantyl methacrylate (molar ratio 8:2, Mw8500, Mw / Mn1.78) was reacted with ethyl vinyl ether to obtain a resin in which the hydroxyl group of the above-mentioned copolymer was protected with 1-ethoxyethyl, and it was used as (A) component.

[0123] use 1 H-NMR analysis of this resin revealed that the ratio of the number of 1-ethoxyethyl groups to the total number of hydroxyl groups of p-hydroxystyrene and adamantanol used was 20%. From this, it can be seen that the protection ratio of the hydroxyl group is 20 mol%.

[0124] In a mixed solvent of PGMEA and EL (the mass ratio of PGMEA:EL is 6:4), dissolve 100 parts by mass of the (A) component and the following amounts of each component relative to the 100 parts by mass of the (A) component, namely, 10 parts by mass of bis(cyclohexylsulfonyl)diazomethane and 2 parts by mass of triphenylsulfonium trifluoromethanesulfonat...

Embodiment 2

[0138] The same positive resist composition as in Example 1 was prepared. On the other hand, a substrate having an organic antireflection film (manufactured by Brewer Science, trade name DUV-44) having a film thickness of 65 nm was prepared on an 8-inch silicon wafer by coating and heating at 205°C.

[0139] The positive resist composition obtained above was applied on a substrate using a spinner. This was dried in advance at 100° C. for 90 seconds on a hot plate to form a resist layer with a film thickness of 560 nm.

[0140] Next, using a KrF scanner "NSR-S203B" (manufactured by Nikon, NA (numerical aperture) = 0.63, 2 / 3 band illumination), the KrF excimer laser was exposed through an 8% copper plate (H.T.) screen by the phase inversion method (248nm). Then, PEB treatment was performed at 110° C. for 60 seconds. Thereafter, at 23°C, it was developed with stirring for 60 seconds using a 2.38% by mass aqueous solution of tetramethylammonium hydroxide, and then rinsed with p...

Embodiment 3

[0148] In a mixed solvent of PGMEA and EL (the mass ratio of PGMEA:EL is 6:4), dissolve 100 parts by mass of component (A) used in Example 1, and the following amounts relative to 100 parts by mass of component (A) Each component, that is, 2 parts by mass of triphenylsulfonium trifluoromethanesulfonate and 3 parts by mass of triphenylsulfonium trifluoromethanesulfonate as (B) component, 0.5 parts by mass as (C) component Polypropylene glycol (Mw1000), 0.27 parts by mass of triethanolamine and 0.09 parts by mass of triisopropanolamine as components (D), so that the total of (A)-(D) is 500 parts by mass, thereby obtaining a positive resist combination things.

[0149] On the other hand, a substrate in which a 65-nm-thick organic antireflection film (manufactured by Brewer Science, trade name DUV-42) was formed on an 8-inch silicon wafer by heating was prepared.

[0150] The positive resist combination obtained above was applied on a substrate using a spinner. This was dried in...

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Abstract

A positive resist composition includes a resin (A) that increases alkali solubility due to action of an acid, wherein the resin comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene, and a second structural unit (a2) derived from a (meth)acrylate with an alcoholic hydroxyl group, and a weight average molecular weight of the copolymer is within a range from 2000 to 8500, and 10 mol % to 25 mol % of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups, an acid generator (B) that generates an acid on exposure to light, and polypropylene glycol (C).

Description

technical field [0001] The present invention relates to a positive resist composition and a method for forming a resist pattern. This application claims priority to Japanese Patent Application No. 2003-169833 filed on June 13, 2003, and uses the contents therein. Background technique [0002] In recent years, in the manufacture of semiconductor elements and liquid crystal display elements, the miniaturization of semiconductor elements and liquid crystal display elements has been rapidly developed along with the progress of photolithography technology. As a method for miniaturization, the wavelength of the exposure light source used is generally shortened. Conventionally, ultraviolet rays such as g-line and i-line have been used in manufacturing. However, mass production of components using KrF excimer laser (248nm) has already started, and ArF excimer laser (193nm) has also started to be used. In addition, studies have been conducted on F2 excimer lasers (157nm), EUV (ext...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/039H01L21/027C08F212/14C08F220/10G03C1/76G03F7/004G03F7/40
CPCG03F7/0392Y10S430/106Y10S430/111G03F7/0397
Inventor 萩原三雄中绪卓新田和行
Owner TOKYO OHKA KOGYO CO LTD
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