Electromechanical non-volatile random memory

Abstract

The invention features mass nanometer-sized memory cells located on a substrate and a glass located above said substrate by a linkage. Each memory cell comprises an electret rotor supported by a rotor axis and located at the center of memory cell. On the substrate at both end of said rotor there is a pair of electrodes. At both sides of said electret rotor there is a pair of control unit MOSFETs. Wherein the two source / drain electrodes are respectively taken as the driving / testing electrodes, and are connected to the electrodes at both ends of said rotor. Another two source / drain electrodes are taken as the bit line of said memory cell, and are connected to the reading / writing signals from an out control circuit. The gate electrode is connected to a selection signal of memory cell word line in the out control circuit. A permanent film layer is coated on the top side of one end of said rotor, and is also coated on said linkage glass opposite to top side of another end of said rotor. The invention uses two mechanical steady states to represent '0'and'1'.

Description

technical field [0001] The invention relates to a memory, in particular to a nano-electromechanical non-volatile random access memory. Background technique [0002] Just like "micron" in the 20th century, "nano" will play a magical and important role in the 21st century, and we have reason to speculate that nanostructures will also pervade every field of data storage devices. Memory can be divided into volatile memory and non-volatile memory according to whether the data is lost after power failure. In commercial memory, the representatives of the two are DRAM and Flash memory. DRAM occupies most of the main memory market due to its fast speed, and Flash also occupies more and more auxiliary memory markets due to its non-volatile and small size. And its storage capacity is also gradually increasing, and now there has been a Flash memory with a storage capacity comparable to that of a hard disk. [0003] But both DRAM and Flash memory have their own shortcomings. For DRAM...

AI Technical Summary

Problems solved by technology

For DRAM, first of all, its volatile storage method leads to the loss of working data after power failure is a basic defect; in addition, because of this storage method, DRAM needs to continuously arrange clock cycles to refresh it when it is working, so as to maintain data and avoid errors, which will result in huge waste of power

For Flash, in order to ensure a long enough data retention time (>10 years), there must be enough electrons stored in the floating gate, but the rate of injecting electrons by thermal electron emission and tunneling current must be limited, so Flash The disadvantage of slow memory is a fundamental problem

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