High depth-width ratio deep sub-micrometer, nanometer metal structure making process based on self-supporting thin film

A self-supporting thin film, deep submicron technology, applied in nanostructure manufacturing, photoengraving process of pattern surface, nanotechnology, etc. It is difficult to achieve and other problems to achieve the effect of strong practical value
CN100466171CActive Publication Date: 2009-03-04SEMICON MFG INT (SHANGHAI) CORP +1

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2009-03-04

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Abstract

The invention bases on metal structure manufacture technology of deep sub-micron and nanometer for high aspect ratio of self-support film comprises: 1. depositing thin Cr and Au on front face of self-support film; 2. whirling electron micelle on thin Cr / Au surface to exposure and develop the electron beam; 3. putting the slice into electroplate liquid to electroplate metal firstly; 4. whirling X-ray resist on front face of slice; 5. taking X-ray exposure and develop from the film back surface; 6. electroplating secondly; 7. removing glue and Cr / Au, and completing the manufacture. This invention has strong applied value and fit to large-scale production.
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Description

technical field

[0001] The invention belongs to the microfabrication field in the semiconductor technology, in particular to a high aspect ratio deep submicron and nanometer metal structure manufacturing process based on a self-supporting film. Background technique

[0002] For phase diffractive optical elements in the high-precision X-ray band, in order to obtain the required phase, it is necessary to fabricate high-aspect ratio deep submicron and nanometer metal structures. As we all know, due to the limitation of resolution and electron energy, conventional electron beam light The engraving process cannot produce high aspect ratio deep sub-micron and nanometer metal structures. If two electron beam lithography processes are used, not only the cost is high and the process is complicated, but also it poses a high challenge to the overlay alignment ability of the electron beam lithography machine. requirements, which are difficult to achieve in practice. Contents of the in...

Claims

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