High depth-width ratio deep sub-micrometer, nanometer metal structure making process based on self-supporting thin film
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Publication Date
- 2009-03-04
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Abstract
Description
technical field
[0001] The invention belongs to the microfabrication field in the semiconductor technology, in particular to a high aspect ratio deep submicron and nanometer metal structure manufacturing process based on a self-supporting film. Background technique
[0002] For phase diffractive optical elements in the high-precision X-ray band, in order to obtain the required phase, it is necessary to fabricate high-aspect ratio deep submicron and nanometer metal structures. As we all know, due to the limitation of resolution and electron energy, conventional electron beam light The engraving process cannot produce high aspect ratio deep sub-micron and nanometer metal structures. If two electron beam lithography processes are used, not only the cost is high and the process is complicated, but also it poses a high challenge to the overlay alignment ability of the electron beam lithography machine. requirements, which are difficult to achieve in practice. Contents of the in...