Check patentability & draft patents in minutes with Patsnap Eureka AI!

Nitride semiconductor device

A technology of nitride semiconductors and nitrides, which is applied in the direction of semiconductor devices, electrical components, transistors, etc., can solve the problems of increased cost of light-emitting diodes, and achieve the effects of reduced driving voltage, low power loss and heat generation, and reduced driving voltage

Active Publication Date: 2009-03-11
SANKEN ELECTRIC CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] For light emitting diodes, a well-known current blocking layer made of an insulating material is provided between the bonding pad electrode and the semiconductor region in order to limit the reactive current under the bonding pad electrode, and the luminous efficiency can be improved by utilizing the function of the current blocking layer , but on the contrary, a special process for forming the current blocking layer is required, and the cost of the light-emitting diode will inevitably increase.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitride semiconductor device
  • Nitride semiconductor device
  • Nitride semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] figure 1 The light-emitting diode shown as the semiconductor element of Embodiment 1 of the present invention has a p-type silicon substrate 1, a buffer zone 3 as an n-type nitride semiconductor region, and a main semiconductor region for constituting the main part of the light-emitting diode, that is, the active part. 4. The first and second electrodes 5 and 6. The main semiconductor region 4 is composed of an n-type nitride semiconductor layer 13 , an active layer 14 and a p-type nitride semiconductor layer 15 epitaxially grown on the buffer zone 3 in this order.

[0051] The p-type silicon substrate 1 is a characteristic structural requirement of the present invention, and has the opposite conductivity type no matter whether the n-type buffer zone 3 is arranged on the layer or not. Doping in the silicon substrate 1, for example, at a concentration of 5×10 18 cm -3 ~5×10 19 cm -3 The left and right p-type impurities are Group 3 elements such as B (boron), which f...

Embodiment 2

[0081] Next, explain Figure 4 The light-emitting diode of Example 2 is shown. But when Figure 4 and later Figure 5 to Figure 9 , in essence with figure 1 The same symbols are assigned to the same parts, and their explanations are omitted.

[0082] Figure 4 The light-emitting diodes are set at figure 1 The deformed buffer zone 3a of the buffer zone 20 of the multi-layer structure is attached on the buffer zone 3 of the figure 1 is the same structure. Figure 4 The deformation buffer 3a, is passed in with figure 1 On the n-type buffer zone 3 made of n-type aluminum gallium indium nitride (AlInGaN) formed in the same way, a buffer zone 20 with a multi-layer structure is arranged. Figure 4 The buffer zone 20 of the multilayer structure is constituted by repeating a plurality of first layers 21 and a plurality of second layers 22 arranged alternately. The plurality of first layers 21 are formed of a nitride semiconductor containing Al (aluminum) in a first proportion....

Embodiment 3

[0091] Figure 5 The LED shown in Example 3, in figure 1Between the p-type silicon substrate 1 and the n-type buffer area 3, an interposer 11 made of a nitride semiconductor containing aluminum is arranged, and the n-type buffer area 3 is also used as an n-type cladding layer, and other figure 1 It is the same structure. exist Figure 5 In , the combination of interposer 11 and n-type buffer zone 3 is denoted as deformation buffer zone 3b, and the combination of active layer 14 and p-type nitride semiconductor region 15a made of InGaN is denoted as main semiconductor region 4a.

[0092] Interposer 11 is preferably composed of a nitride semiconductor represented by the following chemical formula.

[0093] al x In y Ga 1-x-y N

[0094] Wherein, x and y are values ​​satisfying 0<x≤1, 0≤y<1, and 0<x+y≤1. In this Example 3, no n-type impurities are contained in interposer 11 . However, n-type impurities can also be contained in interposer 11 .

[0095] Interposer 11 is a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

There is prepared a p-type silicon substrate (1) which is doped with a p-type impurity and has sufficient conductivity. A buffer region (3) composed of n-type AlInGaN, an n-type nitride semiconductor layer (13) composed of n-type GaN, an active layer (14), and a p-type nitride semiconductor layer (15) composed of p-type GaN are epitaxially grown on the substrate (1) sequentially. The carrier-transporting efficiency from the silicon substrate (1) to the n-type buffer region (3) is enhanced by the interface state in the heterojunction between the p-type silicon substrate (1) and the n-type buffer region (3), thereby lowering the driving voltage of the light-emitting diode.

Description

technical field [0001] The present invention relates to nitride-based semiconductor elements such as light-emitting diodes (LEDs) and transistors. Background technique [0002] A substrate constituting a nitride-based semiconductor element is made of sapphire, silicon carbide, or silicon. Compared with sapphire substrates and silicon carbide substrates, silicon substrates have the advantages of being easier to cut and lower in cost. In addition, a silicon substrate can obtain conductivity that cannot be obtained with a sapphire substrate. Therefore, the silicon substrate can be used as a current path. However, a relatively large voltage drop occurs due to a potential barrier between the silicon substrate and the nitride semiconductor, so that the driving voltage of the light emitting diode is relatively high. [0003] In Japanese Unexamined Patent Application Publication No. 2002-208729 (hereinafter referred to as Patent Document 1), a technique for solving the above-ment...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/26H01L29/73H01L29/78H01L33/00H01L33/02
Inventor 大塚康二杢哲次佐藤纯治多田善纪吉田隆
Owner SANKEN ELECTRIC CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com