LiNbO3/ZnO/diamond multi-layered film structure surface acoustic wave device and its preparing method
A technology of surface acoustic wave devices and diamond films, which is applied to metal material coating processes, coatings, electrical components, etc., can solve problems such as difficulties, film difficulties, and uneven grain size of films, and achieve good crystallinity Effect
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[0014] Example 1:
[0015] ①On the mirror polished silicon substrate, the ratio is 70% Ar: 27% H 2 :3%CH 4 In a mixed gas atmosphere, under the conditions of microwave power 5000W, deposition chamber pressure 80 Torr, mixed gas flow rate 600sccm and substrate temperature 750℃, deposit for 2 hours;
[0016] ②Adjust the substrate temperature to reduce the substrate temperature from 750°C to 600°C within 2 hours; and add oxygen at the beginning of lowering the substrate temperature, and change the gas ratio to: 10%Ar:86.5%H within 15 minutes 2 :1.5%O 2 : 2% CH 4 ; Co-deposition for 2 hours;
[0017] ③ Tempering at 400°C for 4 to 5 hours in an Ar atmosphere to prepare a nanodiamond film with a preferred orientation of the C-axis;
[0018] ④Using an ultra-high vacuum radio frequency magnetron sputtering system, a very thin nanometer ZnO film was sputtered on the surface of the obtained CVD diamond film, the film grain size was 40nm, and the film thickness was 0.12μm. In a pure oxygen a...
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[0020] Example 2:
[0021] Repeat the above steps ①-③ to prepare nano-CVD diamond film;
[0022] ④Using an ultra-high vacuum radio frequency magnetron sputtering system, a very thin nano-ZnO film was sputtered on the surface of the obtained CVD diamond film, the film grain size was 50nm, and the film thickness was 0.15μm. Annealed for 1.0 hour at a temperature of ℃ to form a nano-ZnO film with high C-axis preferential orientation.
[0023] ⑤Using ultra-high vacuum radio frequency magnetron sputtering system, in Ar:O 2 =15:1 atmosphere, substrate temperature 450℃, radio frequency power 55W, DC bias electric field 7V / cm, on the surface of high C-axis preferential orientation nano-ZnO film, prepare high C-axis preferential orientation LiNbO 3 film. LiNbO on the surface of ZnO nano film 3 The film is a nano film with a grain size of 50 nm and a film thickness of 0.7 μm.
[0024] The present invention adds a layer of nano ZnO film with high C-axis preferential orientation due to: C-axi...
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