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LiNbO3/ZnO/diamond multi-layered film structure surface acoustic wave device and its preparing method

A technology of surface acoustic wave devices and diamond films, which is applied to metal material coating processes, coatings, electrical components, etc., can solve problems such as difficulties, film difficulties, and uneven grain size of films, and achieve good crystallinity Effect

Inactive Publication Date: 2009-03-11
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, LiNbO with high C-axis preferred orientation was prepared on CVD diamond 3 film very difficult
Because of the CVD diamond with a film thickness of 15-20μm, it is very difficult for the grain size to be 150-200nm, and in terms of preferred orientation, although it is a C-axis preferred orientation, it is not a high C-axis preferred orientation. Sputtering method Preparation of LiNbO with Grain Size of 40-80nm and High C-axis Preferential Orientation on CVD Diamond 3 film very difficult
LiNbO deposited by pulsed laser deposition 3 Thin film grain size is very uneven

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0015] ① On a mirror polished silicon substrate, the ratio is 70% Ar: 27% H 2 :3%CH 4 In the atmosphere of mixed gas, under the conditions of microwave power 5000W, deposition chamber pressure 80 Torr, mixed gas flow rate 600sccm and substrate temperature 750°C, deposit for 2 hours;

[0016] ②Adjust the substrate temperature so that the substrate temperature is reduced from 750°C to 600°C within 2 hours; and add oxygen while lowering the substrate temperature, and change the gas ratio to: 10%Ar:86.5%H within 15 minutes 2 : 1.5% O 2 :2%CH 4 ; Co-deposition for 2 hours;

[0017] ③Tempering treatment at 400°C for 4 to 5 hours in an Ar atmosphere to prepare a nano-diamond film with a preferred orientation of the C-axis;

[0018] ④ Use an ultra-high vacuum radio frequency magnetron sputtering system to sputter a layer of extremely thin nano-ZnO film on the surface of the obtained CVD diamond film, with a film grain size of 40nm and a film thickness of 0.12μm. In a pure oxygen ...

example 2

[0021] Repeat the above steps ①-③ to prepare nano-CVD diamond film;

[0022] ④Use an ultra-high vacuum radio frequency magnetron sputtering system to sputter a layer of extremely thin nano-ZnO film on the surface of the obtained CVD diamond film. The grain size of the film is 50nm, and the film thickness is 0.15μm. ℃ temperature, annealing for 1.0 hours, forming a nano-ZnO film with high C-axis preferred orientation,

[0023] ⑤ Using ultra-high vacuum radio frequency magnetron sputtering system, in Ar:O 2 =15:1 atmosphere, substrate temperature 450°C, RF power 55W, DC bias electric field 7V / cm, on the surface of nano-ZnO film with high C-axis preferred orientation, LiNbO with high C-axis preferred orientation 3 film. LiNbO on ZnO nanofilm surface 3 The thin film is a nano film with a grain size of 50 nm and a film thickness of 0.7 μm.

[0024] The present invention increases the nanometer ZnO thin film of one deck high C-axis preferential orientation because: C-axis orient...

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Abstract

The invention discloses a LiNbO3 / ZnO / diamond multi-layered film structure surface acoustic wave device and its preparing method. The multi-layered film structure surface acoustic wave device is provided with a high carbon axis preferred orientation nano ZnO middle layer between a CVD diamond film and a LiNbO3 film. The preparation method of the LiNbO3 / ZnO / diamond multi-layered film structure surface acoustic wave device is that: sputtering the high carbon axis preferred orientation nano ZnO film on the CVD diamond film surface, and then sputtering the high carbon axis preferred orientation LiNbO3 film. The invention has the advantages that: a flat and smooth high carbon axis preferred orientation LiNbO3 nano film with a good crystallinity is obtained. The film structure can meet the requirement of the application in the field of high-frequency, high electromechanical coupling factor, high power surface acoustic wave (SAW) device.

Description

【Technical field】 [0001] The invention relates to a surface acoustic wave device, in particular to a LiNbO that can be used in the fields of high frequency, high electromechanical coupling coefficient, high power surface acoustic wave (SAW) devices and the like 3 / ZnO / diamond multilayer film structure surface acoustic wave device and its preparation method. 【Background technique】 [0002] In recent years, the rapid development of mobile communication has made the radio communication frequency band a limited and precious natural resource. The mobile communication system, in the third generation digital system, the global roaming frequency range is 1.8-2.2GHz, and the satellite positioning system (GPS) 1.575 GHz; low-earth orbit new satellite communication (LEO) application frequency from 1.6GHz to 2.5GHz, urgently needs high-frequency surface acoustic wave (SAW) filter. High-frequency SAW filters are also used in intermediate frequency (IF) filtering in high-frequency system...

Claims

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Application Information

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IPC IPC(8): H03H3/08H03H9/25C23C16/34
Inventor 杨保和陈希明熊瑛徐晟孙大智李明
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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