Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Aluminum nitride/borosilicate glass low-temperature co-fired ceramic substrate material and preparation method thereof

A technology of low-temperature co-fired ceramics and borosilicate glass, applied in the direction of circuit substrate materials, printed circuit components, etc., can solve the problem of high cost, achieve low price, reduce cost, and reduce loss

Active Publication Date: 2009-03-18
TSINGHUA UNIV
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the cost of LTCC substrates is higher than that of resin-based substrates. How to reduce costs, improve design automation and scale production is also a problem to be solved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Aluminum nitride/borosilicate glass low-temperature co-fired ceramic substrate material and preparation method thereof
  • Aluminum nitride/borosilicate glass low-temperature co-fired ceramic substrate material and preparation method thereof
  • Aluminum nitride/borosilicate glass low-temperature co-fired ceramic substrate material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The present invention is further described below in conjunction with example. AlN / SiO of the present invention 2 -B 2 o 3 -ZnO-Al 2 o 3 -Li 2 The formulations of O low-temperature co-fired ceramic substrate materials are shown in Table 1 and Table 2.

[0038] Table 1 Glass formulation

[0039] Oxide name SiO 2 B 2 o 3 ZnO Al 2 o 3 Li 2 o 3 Mole percent 12% 24% 54% 5% 5%

[0040] Table 2 Substrate material formula

[0041]

[0042] Table 3 Performance parameters of AlN powder

[0043] purity iron content total oxygen content average particle size specific surface area Bulk Density >99.0% <40ppm

<0.8%

0.5μm >10.2m 2 / g 0.13g / cm 3 Exterior color Bulk density decomposition temperature crystal system Thermal conductivity Dielectric constant off-white 3.26g / cm 3 2450℃ hexagonal 170~220W / m·K 9.5

[0044] The spe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
glass transition temperatureaaaaaaaaaa
quality scoreaaaaaaaaaa
Login to View More

Abstract

This invention relates to electronic baseplate by low-temperature co-sintering of aluminium nitride / borosilicate glass. This baseplate is composed of: AlN 30-70%; oxides 30-70%. Said oxides are then composed (by mol percentages) of: SiO2 8-12%, B203 18-24%, ZnO 45-60%, Al203 3-8%, Li20 3-8%. This inventive product has excellent comprehensive properties, its heat conductivity is increased from that of prior art product 2-5 W / m.K to 10W / m.K. It can be used in more greater power devices with excellent dielectric property. This invention has also advantages of: easily available raw materials, low cost, simple process.

Description

technical field [0001] The invention belongs to the technical field of electronic substrate composite materials, and in particular provides an aluminum nitride / borosilicate glass low-temperature co-fired ceramic (LTCC) substrate material and a preparation method thereof. Background technique [0002] Entering the 21st century, the development momentum of the microelectronics industry is becoming more and more rapid, and the products are rapidly moving towards the direction of light, thin, short, small, low power consumption and multi-function. For example, terminal systems such as mobile phones, PDAs, MP3s, and notebook computers have more and more functions, the volume is getting smaller and smaller, and the circuit assembly density is getting higher and higher; great progress has also been made in RF integrated circuits, monolithic microwave integrated circuits Some passive components have been successfully integrated into IC; other complete machines and circuit systems su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/00C04B35/582H05K1/03
Inventor 赵宏生高廿子
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products