Unlock instant, AI-driven research and patent intelligence for your innovation.

Resonance tunnel penetration enhanced indium gallium arsenic/gallium arsenic quanta trap infrared detector

A resonant tunneling and quantum well technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of not significantly reducing dark current, high potential barrier, and not greatly improving the detection rate of multiple quantum well detectors. Achieve the effect of improving the small light absorption coefficient, increasing the light absorption coefficient, and reducing the dark current

Active Publication Date: 2009-04-15
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Considering the characteristics of the detection wavelength and detection sensitivity of the device, the potential barrier in the device structure cannot be made very high and thick, otherwise the photocurrent will be strongly suppressed, so In x Ga 1-x The dark current of As / GaAs devices has not been significantly reduced
Since the noise of the device is proportional to the dark current of the device, the conventional In x Ga 1-x The detection rate of As / GaAs multi-quantum well detectors has not been greatly improved for many years

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resonance tunnel penetration enhanced indium gallium arsenic/gallium arsenic quanta trap infrared detector
  • Resonance tunnel penetration enhanced indium gallium arsenic/gallium arsenic quanta trap infrared detector
  • Resonance tunnel penetration enhanced indium gallium arsenic/gallium arsenic quanta trap infrared detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Taking GaAs / InGaAs long-wave quantum well infrared detectors with a peak detection wavelength around 14 μm as an example, the specific implementation of the present invention will be further described in detail in conjunction with the accompanying drawings.

[0019] Such as figure 1 As shown, the molecular beam epitaxy method is used to sequentially grow an n-type heavily doped GaAs layer 2 on a GaAs substrate 1 as a contact layer for the lower electrode of the device, a multiple quantum well layer 3, and an n-type Si heavily doped GaAs layer 4, Doping concentration 1.0×10 18 cm -3 , as the electrode lead-out layer on the device.

[0020] The multi-quantum well layer 3 is composed of 10 periodic quantum well structure layers and double barrier resonance tunneling structure layers plus a 50nm thick non-doped GaAs barrier layer 308 .

[0021] The quantum well structure layers in each period are arranged sequentially

[0022] 50nm thick non-doped GaAs barrier layer 301...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention discloses one resonance channel strengthening indium gallium arsenic quantum well infrared detector, which adds one resonance channel double block structure in regular well layer for each circle end. This invention structure has the advantages of strengthening photo current of quantum well infrared detector to realize detector rate.

Description

technical field [0001] The invention relates to an indium gallium arsenide / gallium arsenide (InGaAs / GaAs) long-wave quantum well infrared detector, in particular to an InGaAs / GaAs multi-quantum well infrared detector enhanced by a resonant tunnel double potential barrier structure. Background technique [0002] In the past fifteen years, with the rapid development of low-dimensional materials, the research and development of quantum well infrared detectors has been very active. Compared with traditional mercury cadmium telluride infrared detectors, quantum well detectors have the advantages of good material uniformity, mature device manufacturing process, radiation resistance and low cost. For focal plane array detectors, these advantages are more obvious. However, due to the large dark current and low quantum absorption efficiency and the resulting small photocurrent, quantum well detectors are greatly limited in application. At present, it is generally optimistic that In...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/111
Inventor 陆卫殷菲熊大元李宁甄红楼张波陈平平李天信陈效双李志锋
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI