Method of producing chip copper interconnection high-purity copper sulfate electroplate liquid

Abstract

A method for producing a chip copper interconnection high-purity copper sulfate electroplating solution of the present invention firstly includes an electrolysis step: in the process of electrolysis, an electrolytic cell is used, and an anode and a cathode are arranged in the electrolytic cell, the anode adopts an electrolytic copper plate, and the cathode Platinum plates are used, separated by a one-way membrane between the cathode and the anode, sulfuric acid is used as the electrolyte in the electrolytic cell, and metallic copper is dissolved by electrochemical methods; secondly, a superfiltration purification step is included to obtain a total amount of metal impurities less than 10PPM, high-purity copper sulfate mixed plating solution with organic impurities less than 10PPM. The present invention adopts a purification method combining electrochemistry and membrane technology. By adjusting process parameters and combining semiconductor ultra-purification and ultrafiltration technology, other indicators of the product can be controlled, and the product can be purified without evaporation and crystallization, and the qualified product can be directly produced. High-purity copper sulfate electroplating solution for copper interconnection.

Description

Technical field: [0001] The invention relates to a production method of an electroplating solution, in particular to a production method of a high-purity copper sulfate electroplating solution for chip copper interconnection. Background technique: [0002] In integrated circuit processes, aluminum and aluminum alloys have long dominated interconnect metals. With the continuous reduction of device feature size in integrated circuit chips, the reliability problems caused by RC delay and electromigration of interconnect lines have become the key issues restricting the development of ultra large-scale integration (Uitralarge-Scalelintegration, ULSI) circuits. In order to reduce the interconnect RC delay and improve the reliability problems caused by electromigration, the geometry of the wiring can be optimized in terms of design, and in terms of process, it is necessary to develop interline and interlayer dielectrics with higher dielectric constants. Find new interconnect mater...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a production method of high-purity copper sulfate electroplating solution for copper interconnection of chips. The method described in the prior art solves the problems of long process route, high requirements on raw material quality, and fluctuation of metal impurity content in raw materials. Uncontrollable, need to remove H after reaction 2 o 2 or HNO 3 , There are technical problems such as waste gas and wastewater discharge, environmental pollution, high production cost and low reliability