Method for preparing Si-Al alloy using spray deposition forming process

A spray deposition and alloy technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve problems such as complex procedures and cost increases, and achieve the effects of low conductivity, high processing accuracy, good processability and packaging process performance

Inactive Publication Date: 2009-09-02
UNIV OF SCI & TECH BEIJING
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, powder metallurgy technology often involves complex processes, resulting in increased costs, so it has not been popularized and applied in the preparation of Si-Al alloys.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing Si-Al alloy using spray deposition forming process
  • Method for preparing Si-Al alloy using spray deposition forming process
  • Method for preparing Si-Al alloy using spray deposition forming process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024]A 50% by weight Si-Al alloy was prepared. A 50% by weight Si-Al master alloy ingot was melted in a 150 kg medium frequency induction furnace. Put pure Si with a block size of 4-6 mm and a weight of 15 kg and industrial pure Al with a weight of 15 kg into an intermediate frequency induction furnace crucible, heat up to melt, and cast into an intermediate alloy ingot for later use. The above-mentioned master alloy ingot was remelted, and a 50% by weight Si-Al alloy was prepared by a spray deposition forming method. The process parameters are selected as follows: atomization gas: nitrogen; atomization pressure: 0.7MPa; deposition distance: 550mm; diameter of draft tube: 3.6mm. The coefficient of thermal expansion of the material is 10.6×10 -6 / K. The thermal conductivity is 121W / mK (150°C). The resistivity is 0.4×10 -6 Ωm.

Embodiment 2

[0026] A 60% by weight Si-Al alloy was prepared. A 30% by weight Si-Al master alloy ingot was melted in a 150 kg medium frequency induction furnace. Put pure Si with a block size of 4-6 mm and a weight of 3 kg and industrial pure Al with a weight of 7 kg into an intermediate frequency induction furnace crucible, heat up to melt, and cast into an intermediate alloy ingot for later use. The above-mentioned master alloy ingot was remelted, 4.3 kg of pure Si was added, and a 60% by weight Si-Al alloy was prepared by spray deposition forming method. The process parameters are selected as follows: atomization gas: nitrogen; atomization pressure: 0.8MPa; deposition distance: 600mm; diameter of draft tube: 3.8mm. The coefficient of thermal expansion of the material is 9.1×10 -6 / K. The thermal conductivity is 113W / mK (150°C). The resistivity is 0.9×10 -6 Ωm. The density of the as-deposited 60% by weight Si-Al alloy is 2.3164g / cm 3 , the density after hot isostatic pressing is 2...

Embodiment 3

[0028] A 70% by weight Si-Al alloy was prepared. A 30% by weight Si-Al master alloy ingot was melted in a 150 kg medium frequency induction furnace. Put pure Si with a block size of 4-6 mm and a weight of 6 kg and industrial pure Al with a weight of 14 kg into an intermediate frequency induction furnace crucible, heat up to melt, and cast into an intermediate alloy ingot for later use. The above-mentioned master alloy ingot was remelted, 13.3 kg of pure Si was added, and a 70% by weight Si-Al alloy was prepared by spray deposition forming method. The process parameters are selected as follows: atomization gas: nitrogen; atomization pressure: 0.75MPa; deposition distance: 590mm; diameter of draft tube: 4.0mm. The coefficient of thermal expansion of the material is 8.1×10 -6 / K. The resistivity is 1.6×10 -6 Ωm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
densityaaaaaaaaaa
surface roughnessaaaaaaaaaa
Login to view more

Abstract

The invention provides a method for preparing a Si-Al alloy formed by spray deposition, which is characterized in that: firstly prepare a 25-50% by weight Si-Al master alloy ingot. Then the 50-70 wt% Si-Al alloy is prepared by spray deposition forming method. The spray forming process parameters are selected as follows: atomizing gas: nitrogen; atomizing pressure: 0.6-0.8 MPa; deposition distance: 400-600 mm; diameter of the draft tube: 3.2-4.0 mm. The invention has the advantages that the thermal expansion coefficient of the Si-Al alloy is adjustable, the range is 6-13×10-6 / K, the thermal conductivity is 110-150W / mK, and the density is 2.4-2.5g / cm3. It can be widely used in new packaging or heat dissipation materials required by telecommunications, aviation, aerospace, national defense and other related industrial electronic components.

Description

technical field [0001] The invention belongs to the field of silicon-aluminum alloy preparation technology and electronic packaging materials, and in particular provides a method for preparing a spray-formed high-silicon aluminum alloy with low thermal expansion coefficient, high thermal conductivity, low density and machinability, which is widely used in telecommunications, aviation , Aerospace, national defense and other related industrial electronic components required for new packaging or heat dissipation materials. Background technique [0002] In recent years, with the development of the electronic packaging industry towards high density and high speed, it is imperative to develop materials with good thermal conductivity to meet the heat dissipation requirements brought about by the increase in integration. [0003] Ideal advanced electronic packaging materials should match typical semiconductor materials such as gallium arsenide and silicon, or have a slightly higher ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/115C22C1/04C22C29/18H01L23/29H01L23/373
Inventor 杨滨张济山尧军平陈美英
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products