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Epoxy resin composition for semiconductor encapsulation and semiconductor device

A technology of epoxy resin and semiconductor, which is applied in the direction of semiconductor devices, semiconductor/solid device parts, electric solid devices, etc., can solve the problems of high resistivity epoxy resin composition, high insulation, insufficient electrical characteristics, etc. To achieve the effect of avoiding short circuit or leakage, preventing re-condensation, and avoiding deformation of metal wires

Active Publication Date: 2009-10-21
SUMITOMO BAKELITE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, with resistors containing 10 7 The electronic component device of the component encapsulated with the epoxy resin composition of the non-conductive carbon of Ω or more can prevent the short circuit or leakage of the wiring, but due to the high insulation, the regenerated particles with a particle size of about 80 μm or more are generated due to static electricity. Agglomerates, the re-agglomerates are sandwiched between metal wires to cause deformation of metal wires or flow of metal wires, so there is a problem of insufficient electrical characteristics
Hitherto, there has not been reported an epoxy resin composition that has a high resistivity and does not generate reagglomerates caused by static electricity, and thus development of such products is strongly desired

Method used

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  • Epoxy resin composition for semiconductor encapsulation and semiconductor device
  • Epoxy resin composition for semiconductor encapsulation and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026]The compounding components of Table 1 were mixed with a mixer at room temperature, melted and kneaded with a heating roll at 80 to 100°C, and the kneaded product was cooled and then pulverized to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following evaluation method. The results are shown in Table 2.

[0027] Table 1

[0028] Biphenyl type epoxy resin; "YX4000”

Melting point 105℃,

Epoxy resin equivalent 195g / eq, oiled shell ring

Oxygen resin company

8.5 parts by weight

Phenolic resin for phenol paint; softening point 65℃,

Hydroxyl equivalent 104g / eq

4.5 parts by weight

Spherical fused silica; average particle size 22μm,

Maximum particle size 75μm

84.4 parts by weight

Carbon precursor A; "CB-3-600”,

H / C weight% ratio = 3 / 96, average particle size

3μm, maximum particle size 20μm, resistivity value 1

×10 6 Ω·cm, manufactured by Mitsui Mines

1.0 part by weig...

Embodiment 2～ Embodiment 4

[0045] Except that 1.8 parts by weight (Example 2), 3.0 parts by weight (Example 3), and 0.5 parts by weight (Example 4) were used instead of 1.0 part by weight of the carbon precursor A, the same as in Example 1 was used. Method to proceed. In addition, the blending amount of the spherical fused silica is adjusted according to the change in the blending amount of the carbon precursor A.

Embodiment 5

[0047] Except that the following carbon precursor B was used instead of the carbon precursor A, the same procedure as in Example 1 was performed. The results are shown in Table 2.

[0048] The carbon precursor B: After drying the spherical phenol resin with an average particle diameter of 15 μm, it was fired at 650° C. for 4 hours to obtain a carbon precursor B with a yield of 99%. The physical properties of the obtained carbon precursor B are hydrogen / carbon weight% ratio = 2 / 97, the average particle size is 10 μm, the maximum particle size is 30 μm, and the resistivity value is 1×10 4 Ω·cm.

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Abstract

Outstanding YAG laser marking characteristics can be obtained without electric defects such as a short circuit and leak current and without deforming gold wires by using an epoxy resin composition for semiconductor sealing comprising an epoxy resin, a phenol resin, an inorganic filler, a curing accelerator, and a carbon precursor having a specific electric resistivity in a semiconductor region of 1x10<2>.cm or more but less than 1x10<7>.cm as essential components, wherein the amounts of the inorganic filler and the carbon precursor in the epoxy resin composition are respectively 65-92 wt % and 0.1-5.0 wt %.

Description

Technical field [0001] The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent laser marking properties and electrical characteristics, and a semiconductor device using the epoxy resin composition. Background technique [0002] In the past, semiconductor devices mainly encapsulated with epoxy resin compositions contained conductive carbon black as a colorant in their composition. If an epoxy resin containing carbon black as a coloring agent is used, the shielding properties of the semiconductor element are excellent, and when the product name and lot number are marked with white characters on the semiconductor device, since the background is black, more vivid printing can be obtained. Especially recently, electronic component manufacturers using easy-to-operate YAG laser marking are increasing, and carbon black that absorbs the wavelength of the YAG laser has become an essential component of epoxy resin compositions for semicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08L63/00C08L61/06H01L23/29
CPCC08L61/06H01L2924/0002C08L63/00H01L23/293Y10T428/31511C08L61/04H01L2924/00
Inventor 前田将克
Owner SUMITOMO BAKELITE CO LTD
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