Unlock instant, AI-driven research and patent intelligence for your innovation.

Micromechanical thermopile infrared detector and manufacturing method thereof

An infrared detector and thermopile technology, applied in the field of infrared detectors, can solve the problems of increased device cost and high process difficulty, and achieve the effects of simplifying the manufacturing process, improving device performance, increasing duty cycle and yield

Inactive Publication Date: 2009-11-25
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since these processes require double-sided alignment photolithography on the silicon wafer, the process is difficult and greatly increases the cost of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micromechanical thermopile infrared detector and manufacturing method thereof
  • Micromechanical thermopile infrared detector and manufacturing method thereof
  • Micromechanical thermopile infrared detector and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1: Micromechanical thermopile infrared detector with closed film cavity structure, its manufacturing method is:

[0029] (1) After the double-sided polished (100) silicon wafer 8 is cleaned, it is oxidized at 1150°C to form a 0.6 micron oxide layer, and the window is etched by photolithography. After the back is protected with photoresist, it is etched in 25% tetramethylammonium hydroxide solution at 80°C, with an etching depth of 50-250 microns to form cavity 7, and then silicon oxide is removed, such as Figure 5 (a) shown.

[0030] (2) Double-sided polishing (100) After another silicon wafer 10 is cleaned, it is oxidized at 1150°C to form a 0.6 micron oxide layer 9, and then silicon nitride is deposited by low-pressure chemical vapor deposition (LPCVD) at 850°C to form The thickness of the silicon nitride layer 11 is 0.8-1.2 microns. Then deposit and make borosilicate glass layer 12, such as Figure 5 (b) shown.

[0031] (3) Bond silicon wafers 8 and 1...

Embodiment 2

[0035] Embodiment 2: Its step (1)~(5) is the same as (1)~(5) in embodiment 1, has the micromachined thermopile infrared detector with cantilever beam supporting film cavity structure, only adds the following before (6) one step. That is, the cantilever beam pattern is photoetched on the surface of the composite film, and the cantilever beam structure is obtained by dry etching. One end of the suspension beam is fixedly supported and connected to the silicon substrate (1), and the other end is only connected to the substrate (1) at two points.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a micromechanical thermopile infrared detector and a manufacturing method thereof. It is characterized in that the closed film structure is after the silicon substrate is etched by an anisotropic etchant, leaving a cavity with a side wall of (111) slow corrosion surface, leaving a layer of composite dielectric film on the top of the cavity, and on the film The hot junction area with heat stack is located near the infrared absorption area, and the cold junction area is on the silicon substrate; the basic structure of the cantilever beam supporting membrane cavity is the same, only one end of the cantilever beam is fixed and connected to the silicon substrate; the other end is only connected to the silicon substrate at two points. base connected. The key to the manufacturing process is to form the Si / SiO2 / Si3N4 / Si structure by combining the bonding technology with the silicon corrosion thinning technology to form a film / cavity structure. The present invention abandons the conventional photolithography technology for aligning the front and back sides, simplifies the process and appropriately reduces the distance between the manufactured devices, and improves the duty ratio and yield of the devices.

Description

technical field [0001] The invention relates to a micromechanical thermopile infrared detector manufactured by combining silicon bonding technology and silicon corrosion thinning technology, which is especially suitable for the manufacture of submillimeter-sized thermopile infrared detectors. The invention belongs to the field of infrared detectors. Background technique [0002] At present, in various industries and departments such as industry, agriculture, medicine, and transportation, infrared imaging, infrared temperature measurement, infrared humidity measurement, infrared physiotherapy, infrared detection, infrared alarm, infrared remote sensing, infrared anti-counterfeiting, and infrared heating are competing for choice in various industries. advanced technology. In military applications, infrared imaging, infrared reconnaissance, infrared tracking, infrared guidance, infrared early warning, infrared countermeasures, etc. are all indispensable tactical and strategic ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01J5/12H01L35/00B81B1/00
Inventor 熊斌王翊王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI