Film LED chip device based on compound low-resistance buffer structure and its making method
A technology of LED chip and buffer structure, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as cracking, structural changes, and failures, and achieve the effects of reducing wafer warping, reducing production costs, and improving production efficiency
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[0050] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0051] like Figure 4 A thin-film LED chip device based on a composite low-resistance buffer structure is shown in the figure. Epitaxial film 110; periodic grooves on the GaN-based epitaxial film 110, the periodic grooves are formed by sequentially removing the P-type semiconductor layer and the active layer at periodic intervals until the N-type semiconductor layer is exposed, and formed in the P-type semiconductor layer. The ohmic contact on the semiconductor layer and the metal reflection layer 120, the material of the metal reflection layer 120 is Ag or an alloy formed by a metal selected from Al, Ag, Ni, Au, Cu, Pd and Rh, and its thickness is 50 ~500nm; the multi-layer metal bonding layer 150 formed on the reflective metal layer; the N-electrode multi-layer metal bonding layer 150b formed on the N-type semiconductor layer; the passivation layer 1...
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