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Method for enhancing adhesion force of graphics in photoetching procedure

A photolithographic process and adhesion technology, which is applied in the direction of photosensitive material processing, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problem of reducing the thickness of photosensitive materials, and achieve the effect of reducing the line width of graphics and enhancing the connection area

Inactive Publication Date: 2007-07-25
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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Problems solved by technology

After analyzing the mechanism of the pattern collapse, it is found that this phenomenon is closely related to the surface tension of the bottom material. Currently, it is solved by using a surface tackifier to further enhance the adhesion between the pattern and the substrate material, but this method cannot fundamentally solve the problem. problem; and another method - reducing the thickness of the photosensitive material is not feasible

Method used

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  • Method for enhancing adhesion force of graphics in photoetching procedure

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Embodiment Construction

[0020] The present invention will be described in detail below through the drawings and specific embodiments.

[0021] 1) cleaning the bottom film material 3;

[0022] 2) Perform the first plasma surface treatment, use inert gas to pretreat the surface, clean the surface, break the valence bond connection of the film material, and facilitate subsequent reaction operations;

[0023] The inert gas used is helium, neon, argon, krypton or xenon; the plasma surface treatment time is 50 seconds; the air pressure is set to 5 torr, 10 torr, 30 torr or 50 torr; the power is selected to be 100 watts, 150 watts or 300 watts; the temperature can be selected as 150 degrees, 250 degrees or 300 degrees respectively;

[0024] 3) For the second plasma alkaline surface treatment, a mixed gas of inert gas and reaction gas is introduced to increase the concentration of basic groups on the surface of the film material and enhance the binding ability with acid ions;

[0025] The inert gas used is...

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Abstract

A method for binding pattern in reinforced photo-etching process includes carrying out several times of plasma alkaline treatments on film before photo-etching process is done, forming cross-linked projection unit at bottom of photosensitive-material pattern then using dry-etching means to remove off said cross-linked projection unit of bottom film.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing, and in particular relates to a method for enhancing pattern adhesion in a photolithography process. Background technique [0002] Today's semiconductor devices have developed very powerful functions, but researchers are still striving for perfection, and continue to consider further reducing the area of ​​the device and improving the integration of the circuit board. As we all know, if the device area is to be reduced, the line width of the pattern must also be reduced, so the photosensitive material used in the photolithography process will naturally continue to be thinned. However, too thin photoresist is not conducive to the realization of etching process and ion implantation process masking layer. This contradiction has always existed since the day semiconductors existed. The practice often adopted in the industry is to increase the thickness of the photosensitive ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/26G03F7/42G03F7/36H01L21/027
Inventor 朱骏
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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