SOI compound covariant layer underlay with the Ni Hafnium middle layer

An intermediate layer, hafnium nitride technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problem of weak coordination of mismatching strain of thin single crystal silicon layer, inability to overcome interface chemical reaction or interdiffusion of interface components, surface Large undulations and other problems, to achieve good mismatch strain coordination effect, superior photoelectric performance, and improve the effect of growth quality
CN101017831AInactive Publication Date: 2007-08-15INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2007-08-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The SOI composite covariant substrate with hafnium-nitride thin intermediate layer comprises: from bottom to top, a common SOI variant substrate, including a supporting bottom Si (100) substrate, a decoupling SiO2 insulation layer on middle, and a top ultrathin Si monocrystal covariant layer for mismatch strain coordination; a cubic hafnium-nitride thin intermediate layer together with the Si monocrystal covariant layer forming a composite covariant layer; and a large-mismatch extension layer forming large lattice mismatch with the Si substrate 1 to form together with former two parts a large-mismatch heterostructure.
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Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to an SOI compound variable layer substrate with a thin cubic hafnium nitride intermediate layer. Background technique

[0002] In addition to the advantages of good quality, large size, easy processing, low price, mature technology and integration, silicon (Si) substrates also have good electrical and thermal conductivity. The application prospects of mismatched heterostructure materials are more optimistic. Especially for those important wide-bandgap compound semiconductor materials such as zinc oxide (ZnO), gallium nitride (GaN) and aluminum nitride (AlN) that are difficult to obtain with large size, high quality, and low-cost bulk single crystals, it is especially important for Si substrates. High hopes were placed at the end. However, due to the large lattice mismatch and thermal expansion coefficient difference between Si and these materials, and the directly exposed ...

Claims

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