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Integrated microchip laser medium and device prepared by utilizing plating technology

A technology of laser media and laser devices, applied in the direction of laser parts, laser parts, lasers, etc., can solve problems such as large differences, fractures, and complicated processes, and achieve good consistency

Inactive Publication Date: 2007-08-29
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the gluing method has two main defects: one is that the process is relatively complicated; the other is that there are hidden dangers such as aging, devitrification or even fracture in the gluing part.
However, the preparation cycle of this method is long, and the substrate and the microchip dielectric matrix can only be the same crystal or the same kind of crystal with very close crystal structure parameters.
This restricts the wide application of the method
Moreover, the existing high-performance Q-switching chips, nonlinear optical crystals or stimulated Raman frequency shift materials often have very different crystal structures from high-performance microchip laser media, and this method cannot be used in Q-switching chips, Epitaxial growth of microsheet-structured media on nonlinear optical crystals or stimulated Raman frequency shifted materials, addressing the aforementioned drawbacks of the gluing method

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0010] Example 1: The two ends of the Cr:YAG Q-switching sheet are polished and cleaned as the substrate material, and fixed on the bracket of the vacuum evaporation coating machine. will Nd 3+ The Nd:YAG crystal with an ion concentration of 1.5at% is placed in a crucible as an epitaxial growth material, and the coating chamber in the coating machine is pumped to 5×10 -3 The vacuum degree of Pa, turn on the electron beam, pre-melt Nd:YAG first, after the Nd:YAG crystal is fully melted, open the crucible baffle to slowly evaporate the Nd:YAG, with the help of a thickness gauge, until the Q-switching in Cr:YAG After epitaxial growth of 500 microns of Nd:YAG dielectric on one end of the chip, the electron beam was slowly turned off. After obtaining the composite material in which the above-mentioned laser medium microchip and Q-switching chip are integrated, the Nd:YAG dielectric end face of the composite material is plated with a pump light wavelength of 807 nanometers with hig...

example 2

[0011] Example 2: Will be perpendicular to the multiplier Nd:YVO 4 The two ends of the nonlinear optical crystal KTP (using type II phase matching θ=90°, φ=23.6°) in the phase matching direction of the fundamental wave laser are polished and cleaned as the substrate material, and fixed on the bracket of the vacuum evaporation coating machine . will Nd 3+ Nd:YVO with an ion concentration of 4at% 4 The crystal is placed in a crucible as an epitaxial growth material, and the coating chamber in the coating machine is pumped to 5×10 with a vacuum pump. -3 Pa vacuum, turn on the electron beam, pre-melt Nd:YVO 4 , to be Nd:YVO 4 After the crystal is fully melted, open the crucible baffle to make the Nd:YVO 4 Evaporate slowly, with the help of a thickness gauge, until the epitaxial growth of 400 microns of Nd:YVO on one end of the KTP crystal 4 If the electron beam is slowly turned off, a composite material in which laser dielectric microchips and nonlinear optical crystals are ...

example 3

[0012] Example 3: The two ends of the nonlinear optical crystal BBO (using type I phase matching θ=22.8°, φ=0°) perpendicular to the phase matching direction of the frequency-doubled Nd:YAG fundamental wave laser were polished and cleaned as a substrate The material is fixed on the bracket of the vacuum evaporation coating machine. will Nd 3+ The Nd:YAG crystal with an ion concentration of 1.5at% is placed in a crucible as an epitaxial growth material, and the coating chamber in the coating machine is pumped to 5×10 -3 Pa vacuum, turn on the electron beam, first pre-melt Nd:YAG, after the Nd:YAG crystal is fully melted, open the crucible baffle to slowly evaporate the Nd:YAG, with the help of a thickness gauge, until it is on one end of the BBO crystal Epitaxial growth of 500 micron Nd:YAG dielectric, slowly turn off the electron beam, can obtain the composite material of laser dielectric microchip and nonlinear optical crystal. On the end face of the Nd:YAG dielectric of th...

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PUM

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Abstract

This invention relates to an integrated micro-sheet laser medium and a device prepared by filming technology, which applies a filming technology to prepare a micro-sheet laser medium generating fundamental solid laser on a transparent matrix material, Q-regulation plate, non-linear optical crystal or an excited Raman shift material to get a semiconductor laser or other suitable light source pump and an integrated micro-sheet laser device with Q-regulation, variable-frequency or shift function and changes the semiconductor laser or other light sources to solid laser output of continuous pulses or different wavelengths.

Description

technical field [0001] The invention relates to the field of solid laser materials and devices. Background technique [0002] A microchip laser is a small laser with a laser gain medium thickness of less than 1 mm, and a dielectric film that meets the laser operating conditions is directly coated on both sides. The semiconductor laser can be used as the pump source for end pumping, and the semiconductor laser with poor beam quality and monochromaticity can be converted into a solid-state laser output with high beam quality and good monochromaticity. On this basis, Q-switching elements, nonlinear optical crystals or stimulated Raman frequency-shifting crystals can be added to perform Q-switching, frequency conversion (frequency doubling, frequency mixing) or frequency shifting of the solid-state fundamental wave laser to obtain more applications. Value of laser output in various bands. At present, the commonly used method of gluing combines laser microchips and Q-switching ...

Claims

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Application Information

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IPC IPC(8): H01S3/16H01S3/06H01S3/02H01S3/00
Inventor 林炎富黄艺东陈雨金龚兴红罗遵度谭奇光
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI