Silicon solar battery
A silicon solar cell and cell technology, applied in the field of solar cells, can solve the problems of high purity requirements, high cost, and low purity of silicon materials, and achieve high photoelectric conversion efficiency, increase light absorption coefficient, and increase junction area.
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2007-10-17
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a solar cell, especially a silicon solar cell that can be manufactured using low-purity crystalline silicon. Background technique
[0002] A solar cell is a type of photovoltaic device that directly converts light energy into electrical energy. At present, such devices are mainly made of semiconductor materials. Using the PN junction of semiconductor materials or other structures that can generate self-built electric fields in semiconductor materials, the carriers excited by incident light are separated, and current is generated in the loop through an external circuit. In order to ensure that the carriers excited by the incident light will not be annihilated due to recombination before being separated by the self-built electric field, semiconductor materials are usually required to have extremely high purity. Currently, known silicon solar cells are the most widely used semiconductor silicon material, and its purity is requir...
Examples
Embodiment Construction
[0019] In order to illustrate the practicability of the silicon solar cell structure of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and a specific embodiment.
[0020] Fig. 1 is a prior art closest to the present invention, a schematic structural view of a crystalline silicon solar cell with an S1S (semiconductor-dielectric passivation layer-semiconductor) structure. As shown in Figure 1, it includes battery back electrode 1, battery back surface heavily doped layer 2, P-type or N-type semiconductor silicon substrate layer 3, and textured structure on the surface of semiconductor silicon substrate layer material that are sequentially stacked and combined. 4. Dielectric passivation layer 5 and semiconductor thin film layer 6. The above prior art uses the semiconductor SnO 2 A semiconductor heterojunction is formed with the semiconductor silicon substrate layer 3, wherein the dielectric passi...