Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nanometer porous titanium oxide thick film

A nanoporous, titanium oxide technology, applied in the fields of semiconductor optoelectronics and semiconductor sensors, can solve problems such as difficulty in preparation and storage, and achieve the effects of short slurry grinding time, strong controllability, and improved preparation efficiency

Inactive Publication Date: 2010-12-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention uses a chemical method to replace the traditional stirring method for nano-TiO 2 Particles are dispersed, and low molecular weight polyethylene glycol is used as a microscopic pore structure control agent, and nanoporous TiO is prepared by multiple coatings and high temperature sintering 2 The film not only overcomes the defects of the traditional "powder coating" technology, which is difficult to prepare and preserve, but also can precisely control the microstructure of the film layer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing nanometer porous titanium oxide thick film
  • Method for preparing nanometer porous titanium oxide thick film
  • Method for preparing nanometer porous titanium oxide thick film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] 1. TiO 2 Nano powder pretreatment and substrate preparation.

[0040] 1) TiO 2 Pretreatment of nanopowder

[0041] a. Preparation of nano-dispersion: Weigh P-25 TiO produced by Degussa Company 2 3.0 grams of nano powder, mixed with 60 milliliters of deionized water and 0.5 milliliters of concentrated nitric acid (mass concentration 65-68%), stirred to obtain milky white TiO 2 Suspension.

[0042] b. Water bath: the above TiO 2 The suspension was stirred in a water bath at 80°C for 8 hours.

[0043] c. Dehydration and drying: Remove water from the suspension after the water bath with a rotary evaporator to obtain TiO with nitrate groups adsorbed on the surface 2 Nano powder, denoted as TiO 2 -HNO 3 .

[0044] 2) Substrate preparation

[0045] Ordinary glass slides were used as substrates. First, soak the substrate in hot dilute sulfuric acid (about 60° C.) for 30 minutes, then rinse it thoroughly with acetone, ethanol and deionized water in turn, and place it ...

Embodiment 2

[0052] 1. TiO 2 Nano powder pretreatment and substrate preparation.

[0053] 1) TiO 2 Pretreatment of nanopowder

[0054] a. Preparation of nano-dispersion: Weigh P-25 TiO produced by Degussa Company 2 Mix 3.0 grams of nanometer powder with 60 milliliters of deionized water and 5 milliliters of concentrated nitric acid, and stir to obtain milky white TiO 2 Suspension.

[0055] 2) Substrate preparation

[0056] Select sapphire as the substrate. Its cleaning process is:

[0057] (1) Ultrasonic cleaning in trichloroethane at 50-60°C for 15 minutes; (2) Cleaning in acetone at 20-25°C for 2 minutes; (3) Washing with deionized water for 2 minutes; (4) Washing at 80- 90°C acidic hydrogen peroxide washing solution (composition: HCl: H 2 o 2 :H 2 O=1:4:20) ultrasonic cleaning for 10 minutes; (5) washing with deionized water for 2 minutes; (6) scrubbing the sapphire substrate with lens cleaning paper or a wiper; (7) cleaning at 90-95°C Alkaline hydrogen peroxide lotion (ingre...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
specific surface areaaaaaaaaaaa
specific surface areaaaaaaaaaaa
Login to View More

Abstract

The invention discloses a making method of nanometer porous thick film of titanium oxide, which comprises the following steps: (1) adopting dilute nitric acid to disperse TiO2 nanometer particle; (2) blending the powder, water and pore former into spread coating slurry; (3) coating the TiO2 slurry on the substrate through glass rod; blowing; (4) repeating the coating for several times until the needed thickness; (5) proceeding high-temperature heat disposal; adopting P-25 nanometer powder of Degussa company as the TiO2 powder, the carbowax as pore former, the glass (quartz glass, ITO or FTO conductive glass), monocrystalline silicon, sapphire and other materials as substrate. The thickness of the TiO2 film is controllable between 1 and 30um with grain size about 20-30nm, which simplifies the making method with cheap cost for large-scale manufacturing.

Description

technical field [0001] The invention relates to a method for preparing a nanoporous thick film by using commercial titanium oxide nanopowder, and the prepared nanoporous TiO 2 The thick film can be applied in many fields such as photoanode, photocatalysis, gas sensor, chemical catalyst carrier of dye-sensitized semiconductor nanocrystalline solar cells. The invention belongs to the field of semiconductor optoelectronics and semiconductor sensors. Background technique [0002] TiO 2 It is an n-type semiconductor material with a band gap of 3.2 electron volts. It has stable chemical properties, high photocatalytic activity, and is completely harmless to the human body. Nanocrystalline solar cells and many other aspects have a wide range of applications. [0003] TiO with nanoporous features 2 The preparation and application of the film layer are the attention and research hotspots of the academic and industrial circles at home and abroad. For example, in the field of semi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/23C04B41/50
Inventor 高相东李效民于伟东邱继军
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products