Method of preparing 3C-SiC nano particles by chemical corrosion method

Abstract

The invention discloses a making method of 3C-SiC nanometer particle, which comprises the following steps: adopting the composite liquid of fluohydric acid, nitric acid to etch common 3C-SiC powder; using the size of original powder more than micrometer magnitude's; making the density of etching acid at 35%-45% and the density of nitric acid at 60%-70% with bulk rate at 2. 0-3. 0:1. 0; heating to 80-100 deg. c for 0. 5-2. 0h; cooling; blending reated acid liquid and powder in the high-speed centrifuger to centrifuge; pouring the upper-layer acid liquid; fetching the lower-layer powder; drying in the baker at 70-90 deg. c; adding centrifugal or anhydrous alcohol in the powder; cavitating through ultrasound for 30-60min; fetching the upper supernatant layer with 3C-SiC nanometer particle with size less than 8nm in the deionized water and anhydrous alcohol.

Description

technical field [0001] The invention relates to a simple and cheap method for preparing 3C-SiC nanoparticles capable of emitting strong blue light, especially a method for preparing 3C-SiC nanoparticles with a particle diameter of less than 8 nanometers and strong blue light emitting performance. Background technique [0002] Silicon carbide is the third-generation wide-bandgap semiconductor material developed after the first element semiconductor material (Si) and the second-generation compound semiconductor materials GaAs, GaP, and InP. Silicon carbide not only has a large bandgap width (the bandgap widths of 3C, 4H, and 6H types of silicon carbide at room temperature are 2.24, 3.22, and 2.86eV, respectively), but also has a high critical breakdown electric field, high thermal conductivity, and high load. The characteristics of drift speed and other characteristics have great application potential in high temperature, high frequency, high power, optoelectronics and radiati...

AI Technical Summary

Problems solved by technology

The first method is to generate silicon carbide nanoparticles through various chemical reactions, such as carbon ion implantation into silicon wafers [L.S.Liao, X.M.Bao, Z.F.Yang, and N.B.Min, Appl.Phys.Lett.66, 2382(1995) ], Co-sputtering of silicon dioxide thin films by carbon ions and silicon ions [J.Zhao, D.S.Mao, Z.X.Lin, B.Y.Jiang, Y.H.Yu, X.H.Liu, H.Z.Wang, and G.Q.Yang, Appl.Phys.Lett.73, 1838 (1998)], C 60 Coupled porous silicon [X.L.Wu, G.G.Siu, M.J.Stokes, D.L.Fan, Y.Gu, and X.M.Bao, Appl.Phys.Lett.77, 1292 (2000)] and other preparation methods, but these methods cannot prepare a single structural phase , stable strong blue light-emitting nanoparticles

Another method is the electrochemical corrosion method, that is, the electrochemical method is used to corrode the 3C-SiC multi-chip, and then ultrasonically oscillated to obtain silicon carbide nanoparticles suspended in the solution, which can stably emit blue light with high intensity [X.L.Wu , J.Y.Fan, T.Qiu, X.Yang, G.G.Siu, and P.K.Chu, Phys.Rev.Lett.94, 026102 (2005)], but the preparation process of this method is relatively complicated, and more importantly, SiC multi-wafer Not only expensive, but also difficult to prepare and purchase

Images