Rare-earth-ion or transient metal ion doped scandium aluminium-magnesium-salt fluorescent lining base

A technology of transition metal ions and rare earth ions, which is applied in the fields of luminescent materials, semiconductor devices, chemical instruments and methods, etc., can solve the problem of ineffective doping of rare earth ions or transition metal ions.
CN101070472AInactive Publication Date: 2007-11-14SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
0 Cites 9 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Publication Date
2007-11-14
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

Aluminum magnesium acid indium fluorescence undercoat is a mixture of a rare earth ionic or transition-metal ionic. The fluorescence undercoat is made of mixing aluminum magnesium acid scandium host crystal with rare earth ionic instead of scandium ionic or transition-metal ionic instead of aluminum or magnesium ionic. The ways of making the fluorescence undercoat can be divided into five methods: pull method, temperature gradient method, crucible fall method, heat change method or floating-zone method. The advantages of making white glowing diode by the fluorescence undercoat are: increases the stability of radiant capacity of the components, simplifies the making article of the white glowing diode, decreases the cost and increases the glowing efficiency of white glowing diode.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a white light emitting diode, in particular to a fluorescent substrate material used for the preparation of a white light emitting diode: scandium aluminum magnesium oxide (ScAlMgO) doped with rare earth ions or transition metal ions 4 ) fluorescent substrate and its preparation method, and the method of using this kind of substrate to prepare white light emitting diode through multi-layer epitaxial film growth and correct p-type and n-type doping. Background technique

[0002] Semiconductor lighting is one of the most promising high-tech fields in the 21st century. As the fourth-generation lighting source, white light-emitting diodes are the most promising new products of light-emitting diodes, and have huge development potential in the lighting market. White light-emitting diode solid-state light source has many advantages such as small size, low calorific value, low power consumption, long life, fast response speed, and eas...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More