Rare-earth-ion or transient metal ion doped scandium aluminium-magnesium-salt fluorescent lining base

A technology of transition metal ions and rare earth ions, which is applied in the fields of luminescent materials, semiconductor devices, chemical instruments and methods, etc., can solve the problem of ineffective doping of rare earth ions or transition metal ions.

Inactive Publication Date: 2007-11-14
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] The object of the present invention aims to solve the shortcoming that the existing substrate material cannot be effectively doped with rare earth ions or transition metal ions, and provides a kind of rare earth ion or transition metal suitable for III-V nitride and ZnO-based semiconductor epitaxial film growth. Ion-doped fluorescent substrate material and its preparation method;

Method used

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  • Rare-earth-ion or transient metal ion doped scandium aluminium-magnesium-salt fluorescent lining base
  • Rare-earth-ion or transient metal ion doped scandium aluminium-magnesium-salt fluorescent lining base
  • Rare-earth-ion or transient metal ion doped scandium aluminium-magnesium-salt fluorescent lining base

Examples

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Embodiment 1

[0074] Preparation of Rare Earth Doped Ce by Pulling Method 3+ Ionic scandium aluminum magnesium oxide Ce x :Sc (1-x) AlMgO 4 Single crystal phosphor substrate as an example, Ce 3+ The ion is the ion with the largest radius in the lanthanide rare earth, and the specific preparation process is as follows:

[0075] (1) High-purity Al 2 o 3 (99.999%), MgO (99.99%), Sc 2 o 3 (99.999%) and CeO 2 (99.99%) After the raw material is calcined to remove impurities, the Al 2 o 3 , MgO, Sc 2 o 3 and CeO 2 , weighed a total of 300 grams according to the molar ratio of 1:2:(1-x):2x respectively, wherein x=1mol%, and fully mixed to form a mixed raw material;

[0076] (2) pressurize the above-mentioned mixed raw materials into a block with a diameter slightly smaller than the inner diameter of the crucible, and sinter in a muffle furnace at 1400° C. for 168 hours to carry out a solid-phase synthesis reaction;

[0077] (3) Put the sintered raw materials into the iridium crucible ...

Embodiment 2

[0083] Preparation of Ce-doped by pulling method 3+ Ionic scandium aluminum magnesium oxide ScAlMgO 4 Taking a single crystal fluorescent substrate as an example, the specific preparation process is as follows:

[0084] (1) High-purity Al 2 o 3 (99.999%), MgO (99.99%), Sc 2 o 3 (99.999%) and CeO 2 (99.99%) After the raw material is calcined to remove impurities, the Al 2 o 3 , MgO, Sc 2 o 3 and CeO 2 , respectively weighed a total of 300 grams according to the molar ratio of 1:2:(1-x):2x, wherein x=1mol%, and fully mixed to form a mixed raw material;

[0085] (2) pressurize the above-mentioned mixed raw materials into a block with a diameter slightly smaller than the inner diameter of the crucible, and sinter in a muffle furnace at 1450° C. for 168 hours to perform a solid-phase synthesis reaction;

[0086] (3) Put the sintered raw materials into the iridium crucible of the body-drawing furnace, and put the crucible into the hearth of the single crystal furnace to e...

Embodiment 3

[0091] Preparation of Ce-doped by pulling method 3+ Ionic scandium aluminum magnesium oxide ScAlMgO 4 Taking a single crystal fluorescent substrate as an example, the specific preparation process is as follows:

[0092] (1) High-purity Al 2 o 3 (99.999%), MgO (99.99%), Sc 2 o 3 (99.999%) and CeO 2 (99.99%) After the raw material is calcined to remove impurities, the Al 2 o 3 , MgO, Sc 2 o3 and CeO 2 , respectively 1:2:(1-x):2x molar ratio weighed a total of 300 grams, wherein x=1mol%, and fully mixed to form a mixed raw material;

[0093] (2) pressurize the above-mentioned mixed raw materials into a block with a diameter slightly smaller than the inner diameter of the crucible, and sinter in a muffle furnace at 1400° C. for 168 hours to perform a solid-phase synthesis reaction;

[0094] (3) Put the sintered raw materials into the iridium crucible of the body-drawing furnace, and put the crucible into the hearth of the single crystal furnace to ensure that the center ...

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Abstract

Aluminum magnesium acid indium fluorescence undercoat is a mixture of a rare earth ionic or transition-metal ionic. The fluorescence undercoat is made of mixing aluminum magnesium acid scandium host crystal with rare earth ionic instead of scandium ionic or transition-metal ionic instead of aluminum or magnesium ionic. The ways of making the fluorescence undercoat can be divided into five methods: pull method, temperature gradient method, crucible fall method, heat change method or floating-zone method. The advantages of making white glowing diode by the fluorescence undercoat are: increases the stability of radiant capacity of the components, simplifies the making article of the white glowing diode, decreases the cost and increases the glowing efficiency of white glowing diode.

Description

technical field [0001] The invention relates to a white light emitting diode, in particular to a fluorescent substrate material used for the preparation of a white light emitting diode: scandium aluminum magnesium oxide (ScAlMgO) doped with rare earth ions or transition metal ions 4 ) fluorescent substrate and its preparation method, and the method of using this kind of substrate to prepare white light emitting diode through multi-layer epitaxial film growth and correct p-type and n-type doping. Background technique [0002] Semiconductor lighting is one of the most promising high-tech fields in the 21st century. As the fourth-generation lighting source, white light-emitting diodes are the most promising new products of light-emitting diodes, and have huge development potential in the lighting market. White light-emitting diode solid-state light source has many advantages such as small size, low calorific value, low power consumption, long life, fast response speed, and eas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/77H01L33/00H01L33/50
Inventor 董永军唐慧丽徐军吴锋周国清
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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