Method for preparing Te-Zn-Cd monocrystal in large volume

A cadmium zinc telluride, large-volume technology, applied in the field of preparing large-volume cadmium zinc telluride single crystals, can solve the problems of small CZT single crystal volume, achieve small lattice mismatch, simple and easy operation, and low dislocation density Effect
CN101092748AActive Publication Date: 2007-12-26IMDETEK
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
IMDETEK
Publication Date
2007-12-26

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Abstract

This invention discloses a method for preparing large-volume cadmium zinc telluride (CZT) single crystal. The method comprises: (1) selecting high-melting-point CZT single crystal as the seed crystal; (2) coating a carbon film on the inner side of a quartz ampoule, placing CZT seed crystal in the seed crystal bag at the bottom of the ampoule so that the seeding growth surface of CZT seed crystal is upward, then adding low-melting-point CZT polycrystal, vacuumizing the quartz ampoule, and sealing by welding; (3) placing the quartz ampoule into an ACRT-B type crystal growth apparatus, heating the temperatures of the high-temperature zone and the low-temperature zone to 1135-1145 deg.C and 1030-1040 deg.C within 18-20 h, overheating for 12-16h, and descending the supporting bar at a speed of 0.8 mm / h for 200-240 h; (4) cooling the high-temperature zone and the low-temperature zone to 870-890 deg. within 5-6 h, annealing the crystal ingot in situ for 144-168 h, then slowly cooling to 550-560 deg.C at a rate of 5 deg.C / h, shutting off the power source, and cooling to room temperature. The method can obtain large-volume CZT single crystal, and increase the single crystal ratio in the crystal ingot.
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Description

technical field

[0001] The invention relates to a method for preparing large-volume cadmium zinc telluride (Cd 1-x Zn x Te, hereinafter referred to as CZT) single crystal method when the x value is not specified. Background technique

[0002] With Hg 1-x CD x Research progress of Te long line array and massive focal plane array infrared detectors, in order to satisfy epitaxial growth of Hg 1-x CD x The needs of Te require the preparation of large-volume Cd with uniform composition, high infrared transmittance, and low dislocation density. 0.96 Zn 0.04 Te single crystal. On the other hand, in order to prepare multiple large-volume parallel CZT detectors with high detection efficiency, as well as surface element array detectors for imaging systems, for large-volume Cd with high resistivity, low defect density, and low cost 0.9 Zn 0.1 The demand for Te single crystal is also increasing.

[0003] In order to prepare large-volume CZT single crystals, the solution is to ...

Claims

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