Method of forming metallic pattern, metallic pattern and printed wiring board using it and tft wiring circuit

A technology of metal graphics and graphic forms, which is applied in the direction of printed circuit, printed circuit manufacturing, metal material coating process, etc., can solve the problems of conductivity limitation, etc., and achieve the effect of high precision and high adhesion

Inactive Publication Date: 2008-02-06
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a limit to the conductivity of met

Method used

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  • Method of forming metallic pattern, metallic pattern and printed wiring board using it and tft wiring circuit
  • Method of forming metallic pattern, metallic pattern and printed wiring board using it and tft wiring circuit
  • Method of forming metallic pattern, metallic pattern and printed wiring board using it and tft wiring circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment (2

[0148] In the embodiment (2), the graft pattern is formed by bringing a compound having a polymerizable group and a functional group reactive with the electroless plating catalyst or its precursor into contact with the substrate and then patternwise irradiating radiation rays. In the following description, a "functional group that reacts with an electroless plating catalyst or its precursor" may be referred to as an "interactive group", and a compound having a polymerizable group and an interactive group is referred to as a "containing polymerizable Reciprocal Groups of Composition".

[0149] Grafting patterns by surface grafting

[0150] In the embodiment (2), by bringing the polymerizable compound containing the mutual reactive group into contact with the substrate and applying energy in the form of patterns, it is possible to create a gap between the polymerizable group of the polymerizable compound containing the reactive group and the substrate. A chemical bond is formed, ...

Embodiment

[0319] Hereinafter, the present invention will be described in detail with reference to Examples, but it should be understood that the present invention is not limited to these Examples.

[0320] Examples and comparative examples related to the use of a surface charge improver are Examples 1-1 to 1-4 in preparation for substrates.

[0321] The following composition having the following general formula was coated on the surface of a polyimide film (KAPTON®, manufactured by DuPont-Toray) as a raw material by using a coating bar of rod No. 18, and heated at 80° C. Drying was carried out for 2 minutes to provide an intermediate layer having a thickness of 6 μm.

[0322] After thus obtaining the raw material having the intermediate layer, it was precured by light irradiation for 10 minutes using a 400 W high-pressure mercury lamp (trade name: UVL-400P, manufactured by Riko Kagaku Sangyo), so as to prepare the substrate used in Example 1-1 a.

[0323] Rz of the raw material, polyi...

Embodiment 1-5 to 1-8

[0350] Acrylic was applied to the surface of the substrate A prepared in a similar manner to Example 1-1 with a #6 bar, and the coated surface was laminated with a PET film having a thickness of 25 μm.

[0351] Also, after a chrome deposition mask pattern having a pattern of 5 μm line length and 25 μm gap width and a pattern of 10 μm line length and 20 μm gap width were provided thereon, the substrate A was exposed to UV light (400 W high-pressure mercury lamp: UVL-400P, manufactured by Piko Kagaku Sangyo Co., irradiation period: 30 seconds). After light irradiation, the mask and the overlay film were removed, and the substrate was rinsed with water to provide a grafted pattern material 1-B having polyacrylic acid grafted in a patterned form.

[0352] The Rz of the patterned area of ​​the grafted patterning material 1-B determined in a similar manner to that of the polyimide film raw material was 14 nm.

[0353] form metal pattern

[0354] The graft pattern material 1-B was ...

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Abstract

The invention provides a method of forming a metallic pattern including: (a) forming, in a pattern form on a substrate, a polymer layer which contains a polymer that has a functional group that interacts with an electroless plating catalyst or a precursor thereof; (b) imparting the electroless plating catalyst or precursor thereof onto the polymer layer; and (c) forming a metallic film in the pattern form by subjecting the substrate having the polymer layer to electroless plating using an electroless plating solution, wherein the substrate is treated using a solution comprising a surface charge modifier or 1*10<-10> to 1*10<-4> mmol/l of a plating catalyst poison before or during the (c) forming of the metallic film. The invention further provides a metallic pattern obtained thereby. Furthermore, the invention provides a printed wiring board and a TFT wiring board, each of which uses the metallic pattern as a conductive layer.

Description

technical field [0001] The present invention relates to a method of forming a metal pattern and the metal pattern obtained thereby. In particular, the present invention relates to a method of forming a metal pattern used as a conductive layer of a printed wiring board and a TFT (Thin Film Transistor) wiring board and the metal pattern obtained thereby. Background technique [0002] In this field, the main conventional metal pattern forming methods are the subtractive method, the semi-additive method and the fully additive method. [0003] The subtractive method includes the following steps: forming a photoresist layer sensitive to irradiated activation light on the metal layer formed on the substrate, exposing the photoresist layer to form an image, forming a resist pattern by developing, The metal pattern is formed by etching the metal, and finally the resist is removed. The substrate interface of the metal substrate used in this method is usually roughened to improve the...

Claims

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Application Information

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IPC IPC(8): H05K3/18
CPCC23C18/1608C23C18/30C23C18/2086
Inventor 松本和彦川村浩一加纳丈嘉
Owner FUJIFILM CORP
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