C/C and C/SiC composite material and metal connecting method
A composite material and connection method technology, applied in metal processing equipment, metal material coating technology, welding/welding/cutting articles, etc., can solve problems such as low reliability, complex structure, and poor sealing performance of mechanical connection methods
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Embodiment 1
[0019] Connection of C / SiC to Ti6Al4V.
[0020] (1) C / SiC surface pretreatment
[0021] ① The surface of the C / SiC composite material welding area is ground with a diamond grinding wheel with a particle size of 200 mesh, and the processing volume is 0.2 mm. After completion, the overall ultrasonic degreasing, cleaning, hot air drying (cleaning time, 60min; solvent, carbon tetrachloride). After cleaning, vacuum heat treatment (vacuum degree 5Pa; temperature, 1100°C; time, 60min).
[0022] ②Using the magnetron sputtering process to first sputter a layer of 3 micron thick Ti film on the surface of the C / SiC welding area, and then sputter a layer of 3 micron thick W film. After completion, the overall vacuum heat treatment of the composite material (vacuum degree is better than 3.0×10 -3 Pa; temperature, 1000° C.; time, 30 min).
[0023] (2) Preparation of gradient transition layer in C / SiC welding zone
[0024] ① Paste preparation, coating, and sintering for the first sub-la...
Embodiment 2
[0034] C / C connection to C103 niobium alloy.
[0035] (1) C / C surface pretreatment
[0036] ① Use a diamond grinding wheel with a particle size of 200 mesh to grind the surface of the C / C composite material welding area, and the processing volume is 0.2mm. After completion, the overall ultrasonic degreasing, cleaning, hot air drying (cleaning time, 60min; solvent, carbon tetrachloride). After cleaning, vacuum heat treatment (vacuum degree 5Pa; temperature, 1100°C; time, 60min).
[0037] ②Use the magnetron sputtering process to first sputter a layer of 3 micron thick Ti film on the surface of the C / C welding area, and then sputter a layer of 3 micron thick W film. After completion, the overall vacuum heat treatment of the composite material (vacuum degree is better than 3.0×10 -3 Pa; temperature, 1000° C.; time, 30 min).
[0038] (2) Preparation of gradient transition layer in C / C welding zone
[0039] ① Paste preparation, coating, and sintering for the first sub-layer of ...
Embodiment 3
[0049] Connection of C / SiC to Ti6Al4V.
[0050] (1) C / SiC surface pretreatment
[0051] ① The surface of the C / SiC composite material welding area is ground with a diamond grinding wheel with a particle size of 200 mesh, and the processing volume is 0.2 mm. After completion, the overall ultrasonic degreasing, cleaning, hot air drying (cleaning time, 60min; solvent, carbon tetrachloride). After cleaning, vacuum heat treatment (vacuum degree 5Pa; temperature, 1100°C; time, 60min).
[0052] ②Using the magnetron sputtering process to first sputter a layer of 3 micron thick Ti film on the surface of the C / SiC welding area, and then sputter a layer of 3 micron thick W film. After completion, the overall vacuum heat treatment of the composite material (vacuum degree is better than 3.0×10 -3 Pa; temperature, 1000° C.; time, 30 min).
[0053] (2) Preparation of gradient transition layer in C / SiC welding zone
[0054] ① Paste preparation, coating, and sintering for the first sub-la...
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