High heat conductivity copper-base composite material and preparation method thereof

A copper-based composite material, high thermal conductivity technology, applied in the field of electronic packaging materials, can solve the problems of difficult processing, difficult preparation, complex structure, etc., and achieve the effect of overcoming poor wettability, reducing thermal stress and excellent performance

Active Publication Date: 2010-06-30
GRIMAT ENG INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main problem in the application of this type of copper-based composite material is that it is difficult to process, and it is difficult to prepare thin-walled and complex-structured devices. The existing preparation methods mainly include powder metallurgy or direct infiltration of metal in reinforcement particles. These preparation methods all inevitably face the above problems

Method used

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  • High heat conductivity copper-base composite material and preparation method thereof
  • High heat conductivity copper-base composite material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Raw materials: SiC particles with a particle size of 14 μm, electrolytic copper.

[0029] Mix 14 μm SiC particles and binder in a volume ratio (50:50) on a mixer at 130° C. for 1 hour, break into powder after cooling, and then prepare a preform body on an injection molding machine. Soak the preform body in gasoline for 24 hours to extract and degrease the binder. After natural air drying, perform thermal degreasing and pre-sintering at 1200°C for 1 hour in a hydrogen atmosphere to obtain a preform, which is then packed into graphite The electrolytic copper block is placed on the preform according to the volume ratio (50:50), and then placed in a pressure infiltration furnace. When the vacuum is pumped to 0.1Pa, the copper block metal is melted at a temperature of 1200°C. Pressure infiltration, furnace cooling, demoulding. The density of the obtained composite material is 6.24g / cm 3 , the thermal conductivity is 300W / mK, and the thermal expansion coefficient is 10.9×10...

Embodiment 2

[0031] Raw materials: SiC particles with a particle size of 28 μm, oxygen-free copper.

[0032] Mix 28 μm SiC particles and binder in a volume ratio (75:25) on a mixer at 130° C. for 1 hour, break into powder after cooling, and then prepare a preform body on an injection molding machine. Soak the preform body in gasoline for 24 hours to extract and degrease the binder. After natural air drying, perform thermal degreasing and pre-sintering in a hydrogen atmosphere to obtain a preform, and then put it into a graphite mold, and Put the electrolytic copper block on the preform according to the volume ratio (75:25), and then put it into the pressure infiltration furnace. When the vacuum is pumped to 0.1Pa, the copper block metal is melted when the temperature rises to 1200°C, and the infiltration is carried out. Cold, unmold. The density of the obtained composite material is 4.88g / cm 3 , the thermal conductivity is 250W / mK, and the thermal expansion coefficient is 8.2×10 -6 / K. ...

Embodiment 3

[0034] Raw materials: Copper-plated diamond particles with a particle size of 28 μm, electrolytic copper.

[0035] The copper-plated diamond particles of 28 μm and the binder were mixed on a mixer at 130 °C for 1 hour in a volume ratio (75:25), and then crushed into powder after cooling, and then prepared a preform body on an injection molding machine . Soak the preform body in gasoline for 24 hours to extract and degrease the binder. After natural air drying, perform thermal degreasing and pre-sintering in a hydrogen atmosphere to obtain a preform, and then put it into a graphite mold, and Put the electrolytic copper block on the preform according to the volume ratio (75:25), and then put it into the pressure infiltration furnace. When the vacuum is pumped to 0.1Pa, the copper block metal is melted when the temperature rises to 1100°C, and the infiltration is carried out. Cold, unmold. The density of the obtained composite material is 4.84g / cm 3 , the thermal conductivity ...

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Abstract

The invention belongs to the technical field for the electronic packaging material preparation; in particular, the invention designs a high heat conducting copper-based compound material and the preparation method thereof. The copper-based compound material is made into an enforced body fabricated part through the spraying and forming technology fabricated by an enforced body and binding agent, wherein, the size of the grain of the enforced body is 7 to 60 micrometers, and the grain is composed of one or two of silicon carbide grain, diamond grain, or aluminum nitride grain; the copper base body is directly arranged on the enforced body fabricated part, wherein, the copper base body is electrolytic copper or oxygen-free copper, and the volume ratio of the enforced body and the copper basebody is 50 to 75 percent:25 to 50 percent, as well as the enforced body and the copper base body are made by a pressure infiltration technology. The preparation method adopts the injection forming technology of the fabricated part and the pressure infiltration technology to produce the high heat conducting copper-based compound material. The heat conducting rate of the copper-based compound material of the invention is higher than that of the aluminum-based compound material of an identical enforced system, the density of the material is low, the expansion coefficient is small, and the invention satisfies the request of light mass of the packaging material.

Description

technical field [0001] The invention belongs to the technical field of electronic packaging materials, and particularly designs a copper-based composite material with high thermal conductivity and a preparation method thereof. Background technique [0002] Electronic packaging tends to be miniaturized, which leads to a rapid increase in chip integration, resulting in increased heat generation and continuous rise in circuit operating temperature. The thermal conductivity of pure copper is 401W / mK, and the thermal expansion coefficient is as high as 16.5×10 -6 / K, so in order to take advantage of the high thermal conductivity of copper and avoid the thermal stress caused by the excessive thermal expansion coefficient during application, one method is to add W, Mo and low expansion alloy ( Such as FeNi alloy) and other powders are W / Cu, Mo / Cu and Invar / Cu materials commonly used in the field of electronic packaging materials. This type of copper-based composite material has h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C9/00B22D23/04
Inventor 郭宏张习敏尹法章石力开徐骏张永忠席明哲
Owner GRIMAT ENG INST CO LTD
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